Current Research


Heterogeneous III-V on Si Integration Platform

Our group is interested in lattice mismatched growth of III-V compound semiconductors on silicon by metal-organic chemical vapor deposition (MOCVD) for heterogeneous integration. This involves developing a fundamental understanding of the nucleation process, crystal lattice engineering, defect study, and advanced materials characterization from macro- to nanometer-scale. We have explored a variety of techniques, including metamorphic buffer layer approach, nano-scale pattered growth, aspect ratio trapping, interfacial misfit (IMF) array, epitaxial lateral overgrowth, and so on. Oftentimes, these methods are combined with low-dimensional structures like quantum dots, quantum wires and nano-ridges so as to leverage the inherent crystallographic geometry for defect trapping and filtering. By establishing a monolithic III-V on Si platform with a broad spectrum of materials, we are actively engaged in fabricating emerging devices, developing new functionalities, and integrating heterogeneous device technologies.

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III-V Quantum Dot Lasers on Silicon

Miniaturized laser sources can benefit a wide variety of applications ranging from on-chip optical communications and data processing, to biological sensing. There is a tremendous interest in integrating these lasers with rapidly advancing silicon photonics, aiming to provide the combined strength of the optoelectronic integrated circuits and existing large-volume, low-cost silicon-based manufacturing foundries. Using III-V quantum dots as the active medium has been proven to lower power consumption and improve device temperature stability.

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GaN Power Electronics

To be updated

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III-Nitride Micro-Display Technology

To be updated

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