Ping K. KO (PhD, UC Berkeley, 1982)

Professor

Research Interests

High speed VLSI devices, technology, and circuits; MOS device modeling for circuit simulation; CAD tools for integrated circuit design.

Professor Ko received his BS degree in Physics with special honors from Hong Kong University in 1974, and MS and PhD degrees in Electrical Engineering from the University of California at Berkeley, in 1978 and 1982 respectively.

In 1982 and 1983, he was at Bell Labs, Holmdel, leading a research team to develop high-speed MOS technologies for communication circuits. He joined the Berkeley faculty in 1984. He was the Director of the Berkeley Microfabrication Laboratory from 1984 to 1993, and the Vice-Chairman of the Department of EECS from 1991 to 1993. He came to UST in August 1993 as Visiting Professor in the Department of Electrical & Electronic Engineering until April 1995, and as Dean of Engineering from May 1995 through June 2000.

Professor Ko has authored or co-authored one book and over 200 research papers. His works on MOS technology, MOS device physics and modeling, and integrated circuit reliability are renowned worldwide. He has extensive experience serving the industrial as well as the professional and academic communities. He was associate editor of the IEEE transaction on electron devices from 1988 to 1990, and was on the program committee of many major international conferences. He was the Chairman of HK Research Grants Council from January 1994 to July 1999, and a member of the UGC from April 1993 to March 1998.

Recent Publications

• S. K.-H. Fung, M. Chan, and P.K. Ko, "Impact of Width and Silicon Film Thickness Scaling on MESA Isolated SOI MOSFET", IEEE Trans. of Electron Devices, Vol. 45, No. 5, pp. 1105-1110, May 1998.
• M. Chan, K.Y. Hui, C. Hu, and P.K. Ko, "A Robust and Physical BSIM3 Non-Quasi-Static Transient and AC Small-Signal Model for Circuit Simulation", IEEE TED-45, No. 4, p. 834, April 1998.
• S.R. Banna, P.C.H. Chan, M. Chan, S. K.-H. Fung, and P.K. Ko, "A Unified Understanding of Fully-Depleted SOI NMOSFET Hot-Carrier Degradation", IEEE TED-45, No. 1, p. 206, January 1998.
• S. K.-H. Fung, M. Chan, and P.K. Ko, "Inverse-Narrow-Width Effect of Deep Sub-Micrometer MOSFET's with LOCOS Isolation", Journal of Solid-State Electronics, Vol. 41, No. 12, pp. 1885-1889, December 1997.
• S. K.-H. Fung, M. Chan, D. Sinitsky, S. Tang, C. Hu, and P.K. Ko, "Analysis of Floating Body Effect in Non-Fully Depleted SOI MOSFETS Based on Charge Coupling", 1997 International Device Research Symposium Proceeding, Virginia, pp. 359-362, December 1997. S.
• K.-H. Fung, M. Chan, and P.K. Ko, "Reoxidixed MESA Isolated SOI MOSFET Width Scaling as a Function of Silicon Film Thickness", Proceedings of 7th International Symposium on IC Technology, Systems & Applications, pp. 154-157, 10-12 September 1997.
• S. K.-H. Fung, M. Chan, and P.K. Ko, "Experimental Characterization of Transient Floating Body Effect in Non-Fully Depleted SOI MOSFET", 1997 IEEE International SOI Conference Proceedings, Fish Camp, Yosemite, California, pp. 80-81, 6-9 October 1997.
• W. Zhang, M. Chan, S. K.-H. Fung, S. Chan, and P.K. Ko, "Photon Induced Hump Effect in NMOSFET", Proceedings of 7th International Symposium on IC Technology Systems & Applications, pp. 518-521, 10-12 September 1997.
• S.R. Banna, P.C.H. Chan, M. Chan, S. K.-H. Fung, and Ping K. Ko, "Fully Depleted CMOS/SOI Device Design Guidelines for Low Power Applications", Proceedings of 1997 International Symposium on Low Power Electronics and Design, Montery, California, pp. 301-306, 18-20 August 1997.
• W. Zhang M. Chan, S. K.-H. Fung, and P.K. Ko, "A High Responsivity Photodetector on SOI Substrate", Proceedings of 1997 IEEE Workshop on Charge-Coupled Devices & Advanced Image Sensors, Bruges, Belgium, pp. P9, 1-4, 5-7 June 1997.