*Publications:*

**Book
Chapters**

**K. J. Chen****and S. Yang,****"**Recent Progress in GaN-on-Si HEMT,International Standard Book Number-13: 978-1-4987-4713-4 (Hardback).**"**in HANDBOOK OF GaN SEMICONDUCTOR MATERIALS AND DEVICES,*CRC Press*, Taylor & Francis Group,**Chapter 11, 2018.**

**K. J. Chen****, "Fluorine-Implanted Enhancement-Mode Transistors" in***Power GaN Devices*, Springer International Publishing, ISBN: 978-3-319-43197-0, Chapter 12, pp. 273-293, 2016.

**K. J. Chen****and L. L. W. Leung, "CMOS-compatible micromachined edge-suspended planar inductors and coplanar waveguides" in***Si-Based Semiconductor Components for RF Integrated Circuits*, Transworld Research Network, Ed. Will Z. Cai, ISBN: 81-7895-196-7, Chapter 8, pp. 217-242, 2006.

**Recent
Journal Papers (2003-present) (**

**2018:**

- X.
Tang, B. Li,
**K. J. Chen**, and J. Wang, "Photocurrent characteristics of metal-AlGaN/GaN Schottky-on-heterojunction diodes induced by GaN interband excitation,"*Appl. Phys. Express*, 11, 054101, 2018. - Q.
Qian, Z. Zhang, and
**K. J. Chen**, "Layer-dependent second-order Raman intensity of MoS_{2}and WSe_{2}: influence of intervalley scattering,"*Physical Review B*, 97, 165409, 2018. **(Invited Paper)**H. Amano, et al., "The 2018 GaN power electronics roadmap, "*J. Phys. D: Appl. Phys*. 51 (2018) 163001.

- Q. Qian,
Z. Zhang, and
**K. J. Chen**, "In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS_{2}and WSe_{2}for High-k Integration: A First-Principles Study,"*Langmuir*, 34, pp. 2882-2889, 2018. DOI: 10.1021/acs.langmuir.7b03840.

- M. Hua, Q. Qian, J. Wei, Z.
Zhang, G. Tang, and
**K. J. Chen**, "Bias Temperature Instability of Normally-Off GaN MIS-FET with Low-Pressure Chemical Vapor Deposition SiN_{x}Gate Dielectric, "*Phys. Status Solidi A*, 2018, 1700641, DOI: 10.1002/pssa.201700641.

- J. Lei, J. Wei, G. Tang, Z. Zhang, Q. Qian,
Z. Zheng, Mengyuan, and
**K. J. Chen**, "650-V Double-Channel Lateral Schottky Barrier Diode with Dual-Recess Gated Anode,"*IEEE Electron Device Lett., IEEE Electron Device Lett.,*vol. 39, no. 2, pp. 260-263, Feb. 2018.

- M. Hua, J.
Wei, Q. Bao, Z. Zhang, Z. Zheng, and
**K. J. Chen**, "Dependence of*V*_{TH}Stability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET,"*IEEE Electron Device Lett.,*vol. 39, No. 3, pp. 413-416, 2018, DOI: 10.1109/LED.2018.2791664.

- S. Huang, X. Liu, X. Wang, X. Kang, J. Zhang,
J. Fan, J. Shi, K. Wei, Y. Zheng, H. Gao, Q. Sun, M. Wang,
B. Shen, and
**K. J. Chen**, "Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices,"*IEEE Trans. Electron Devices,*vol. 65, no. 1, pp. 207-214, 2018.

- J. Wei, J. Lei, X. Tang, B. Li, S. Liu, and
**K. J. Chen**, "Channel-to-Channel Coupling in Normally-Off GaN Double-Channel MOS-HEMT,"*IEEE Electron Device Lett.,*vol. 39, no. 1, pp. 59-62, 2018.

- K. Kim, M. Hua, D. Liu, J. Kim,
**K. J. Chen**, and Z. Ma, "Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al_{2}O_{3}," Nano Energy, 43 (2018) 259-269.

**2017:**

- S. Yang, C. Zhou,
S. Han, J. Wei, K. Sheng, and
**K. J. Chen**, "Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices,"*IEEE Trans. Electron Devices,*vol. 64, no. 12, pp. 5048-5056, 2017.

- Q. Qian, Z. Zhang, M. Hua,
J. Wei, J. Lei, and
**K. J. Chen**, "Remote N_{2}Plasma Treatment to Deposit Ultrathin High-k Dielectric As Tunneling Contact Layer for Single-layer MoS_{2}MOSFET,"*Appl. Phys. Express*, vol. 10, p. 125201, 2017.

- Z. Zhang, B. Li, Member, Q. Qian,
X. Tang, M. Hua, B. Huang, and
**K. J. Chen**, "Revealing the Nitridation Effects on GaN Surface by First-Principles Calculation and X-Ray/Ultraviolet Photoemission Spectroscopy,"*IEEE Trans. Electron Devices**,*vol. 64, No. 10, p. 4036-4036, 2017.

- G. Tang, A.
M. H. Kwan, R. K. Y. Wong, J. Lei, R. Y. Su, F. W. Yao, Y.
M. Lin, J. L. Yu, T. Tsai, H. C. Tuan, A. Kalnitsky, and
**K. J. Chen**, "Digital Integrated Circuits on an E-mode GaN Power HEMT Platform,"*IEEE Elec. Dev. Lett*., vol. 38, No. 9, pp. 1282-1285, 2017.

- S. Liu, M. Wang, M.
Tao, R. Yin, J. Gao, H. Sun, W. Lin, C. P. Wen, J. Wang,
W. Wu, Y. Hao, Z. Zhang,
**K. J. Chen**, and B. Shen, "Gate-Recessed Normally-OFF GaN MOSHEMT with Improved Channel Mobility and Dynamic Performance Using AlN/Si3N4 as Passivation and Post Gate-Recess Channel Protection Layers,"*IEEE Elec. Dev. Lett*., - G. Tang, J. Wei, Z.
Zhang, X. Tang, M. Hua, H. Wang, and
**K. J. Chen**, "Dynamic*R*_{ON}of GaN-on-Si Lateral Power Devices with a Floating Substrate Termination,"*IEEE Elec. Dev. Lett*., vol. 38, No. 7, pp. 937-940, 2017. - M. Hua, J. Wei,
G. Tang, Z. Zhang, Q. Qian, X. Cai, N. Wang, and
**K. J. Chen**, "Normally-Off LPCVD-SiNx/GaN MIS-FET with Crystalline Oxidation Interlayer,"*IEEE Elec. Dev. Lett*., vol. 7, No. 38, pp. 929-932, 2017. - M. Zhang, J. Wei,
H. Jiang,
**K. J. Chen**, and C. H. Cheng, "A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance,"*IEEE Trans. Device and Materials Reliability*, vol. 17, No. 2, pp. 432-437, 2017. - M. Zhang, J. Wei, H.
Jiang,
**K. J. Chen**, and C. Cheng, "SiC trench MOSFET with self-biased p-shield for low RON-SP and low OFF-state oxide field,"*IET Power Electron.,*vol. 10, no. 10, No. 10, pp. 1208-1213, 2017. - J. Wei, M. Zhang, H.
Jiang, H. Wang, and
**K. J. Chen**, "Dynamic Degradation in SiC Trench MOSFET with a Floating p-Shield Revealed With Numerical Simulations,"*IEEE Trans. Electron Devices**,*vol. 64, No. 6, pp. 2592-2598, 2017. - Q. Qian, Z. Zhang, M. Hua, G.
Tang, J. Lei, F. Lan, Y. Xu, R. Yan, and
**K. J. Chen**, "Enhanced dielectric deposition on single-layer MoS_{2}with low damage using remote N_{2}plasma treatment,"*Nanotechnology,*vol. 28, No. 17, p. 175202, 2017. **(Invited Paper) K. J. Chen**, O. Häberlen, A. Lidow, C. L. Tsai, T. Ueda, Y. Uemoto, and Y. Wu, "GaN-on-Si Power Technology: Devices and Applications,"*IEEE Trans. Electron Devices*, vol. 64, No. 3, pp. 779-795, 2017.- R. Xie,
H. Wang, G. Tang, X. Yang, and
**K. J. Chen**, "An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration,"*IEEE Trans. Power Electronics*, vol. 32, No. 8, pp. 6416-6488, 2017. - H. Wang,
J. Wei, R. Xie, C. Liu, G. Tang, and
**K. J. Chen**, "Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Degradation and Circuit Design Considerations,"*IEEE Trans. Power Electronics*, vol. 32, No. 7, pp. 5539-5549, 2017. - S. Yang, S. Liu, Y. Lu, and
**K. J. Chen**, "Trapping mechanisms in insulated-gate GaN power devices: Understanding and characterization techniques,"*physica status solidi (a),*vol. 214, p. 1600607, 2017.

**2016:**

- S. Huang,
X. Liu, X. Wang, X. Kang, J. Zhang, Q. Bao, K. Wei, Y.
Zheng, C. Zhao, H. Gao, Q. Sun, Z. Zhang, and
**K. J. Chen**, "High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure,"*IEEE Elec. Dev. Lett*., vol. 37, No. 12, pp. 1617-1620, 2016. - B. Li, X.
Tang, G. Tang, J. Wei, J. Wang, and
**K. J. Chen**, "Switching Behaviors of On-Chip Photon Source on AlGaN/GaN-on-Si Power HEMTs Platform,"*IEEE Photonics Technology Lett.*, vol. 28, pp. 2803-2806, 2016.

- J. Wei,
M. Zhang, H. Jiang, C. Cheng, and
**K. J. Chen**, "Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges,"*IEEE Elec. Dev. Lett*., vol. 37, pp. 1458-1461, 2016. - X. Tang,
B. Li, Z. Zhang, G. Tang, J. Wei, and
**K. J. Chen**, "Characterization of Static and Dynamic Behaviors in AlGaN/GaN-on-Si Power Transistors With Photonic-Ohmic Drain,"*IEEE Trans. Electron Devices*, vol. 63, pp. 2831-2837, 2016. - Q. Qian,
B. Li, M. Hua, Z. Zhang, F. Lan, Y. Xu, R. Yan, and
**K. J. Chen**, "Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS_{2}MOSFET with an AlN Interfacial Layer,"*Scientific Reports*, vol. 6, p. 27676, 2016. - J. Wei,
H. Jiang, Q. Jiang, and
**K. J. Chen**, "Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications,"*IEEE Trans. Electron Devices*, vol. 63, pp. 2469-2473, 2016.

**(Feature Article) K. J. Chen**, S. Yang, S. Liu, C. Liu, and M. Hua, "Toward reliable MIS- and MOS-gate structures for GaN lateral power devices,"*Phys. Status Solidi A*, vol. 213, pp. 861-867, 2016.- M. Hua,
Y. Lu, S. Liu, C. Liu, K. Fu, Y. Cai, B. Zhang, and
**K. J. Chen**, "Compatibility of AlN/SiNx Passivation With LPCVD-SiN_{x}Gate Dielectric in GaN-Based MIS-HEMT,"*IEEE Elec. Dev. Lett.*, vol. 37, No. 3, pp. 265-268, 2016. **(Invited Article)**B. Li, X. Tang, J. Wang, and**K. J. Chen**, "Optoelectronic Devices on AlGaN/GaN HEMT Platform, "*Phys. Status Solidi A*, vol. 213, No. 5, pp. 1213-1221, 2016.- X. Tang,
B. Li, Y. Lu, and
**K. J. Chen**, "On-chip Addressable Schottky-on-Heterojunction Light-Emitting Diode Arrays on AlGaN/GaN-on-Si Platform, "*Phys. Status Solidi C*, vol. 13, No. 5-6, pp. 365-368, 2016.

- S. Yang,
Y. Lu, H. Wang, S. Liu, C. Liu, and
**K. J. Chen**, "Dynamic Gate Stress-Induced*V*_{TH}Shift and Its Impact on Dynamic*R*_{ON}in GaN MIS-HEMTs,"*IEEE Elec. Dev. Lett.*, vol. 37, pp. 157-160, 2016. - S. Yang,
S. Liu, C. Liu, M. Hua, and
**K. J. Chen**, "Gate Stack Engineering for GaN Lateral Power Transistors, "*Semicond. Sci. Technol.*31, 024001, 2016.

**2015:**

- J. Wei,
S. Liu, B. Li, X. Tang, Y. Lu, C. Liu, M. Hua, Z. Zhang,
G. Tang, and
**K. J. Chen**, "Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor, "*IEEE Elec. Dev. Lett*., vol. 36, No. 12, pp. 1287-1290, 2015. - M. Hua,
C. Liu, S. Yang, S. Liu, K. Fu, Z. Dong, Y. Cai, B. Zhang, and
**K. J. Chen**, "Characterization of Leakage and Reliability of SiN_{x}Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs, "*IEEE Trans. Electron Devices*, vol. 62, No. 10, pp. 3215-3222, 2015. - X. Wang,
J. Xu, Z. Wang,
**K. J. Chen**, X. Wu, Z. Wang, P. Yang, and L. H. K. Duong, "An Analytical Study of Power Delivery Systems for Many-Core Processors Using On-Chip and Off-Chip Voltage Regulators, "*IEEE Trans. Computer-Aided Design Of Integrated Circuits And Systems*, vol. 34, No. 9, pp. 1401-1414, 2015. - C. Zhang,
M. Wang, B. Xie, C. P. Wen, J. Wang, Y. Hao, W. Wu,
**K. J. Chen**, and B. Shen, "Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate, "*IEEE Trans. Electron Devices*, vol. 62, NO. 8, pp. 2475-2480, 2015. - H. Wang,
C. Liu, Q. Jiang, Z. Tang, and
**K. J. Chen**, "Dynamic Performance of AlN-Passivated AlGaN/GaN MIS-High Electron Mobility Transistors Under Hard Switching Operation, "*IEEE Elec. Dev. Lett*., vol. 36, No. 8, pp. 760-762, 2015. - S. Lin,
M. Wang, B. Xie, C. P. Wen, M. Yu, J. Wang, Y. Hao, W. Wu,
S. Huang,
**K. J. Chen**, and B. Shen, "Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment, "*IEEE Elec. Dev. Lett*., vol. 36, No. 8, pp. 757-759, 2015. - S. Huang,
X. Liu, J. Zhang, K. Wei, G. Liu, X. Wang, Y. Zheng, H.
Liu, Z. Jin, C. Zhao, C. Liu, S. Liu, S. Yang, J. Zhang,
Y. Hao, and
**K. J. Chen**, "High RF Performance Enhancement-Mode Al_{2}O_{3}/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique, "*IEEE Elec. Dev. Lett*., vol. 36, No. 8, pp. 754-756, 2015. - S. Yang,
S. Liu, Y. Lu, C. Liu, and
**K. J. Chen**, "AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs, "*IEEE Trans. Electron Devices*, vol. 62, No. 6, pp. 1870-1878, 2015. - Y. Lu, Q.
Jiang, Z. Tang, S. Yang, C. Liu, and
**K. J. Chen**, "Characterization of SiN_{x}/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition, "*Appl. Phys. Express*8, 064101, 2015. - H. Wang,
A. M. Kwan, Q. Jiang, and
**K. J. Chen**, "A GaN Pulse Width Modulation Integrated Circuit for GaN Power Converters, "*IEEE Trans. on Electron Devices*, vol. 62, No. 4, pp. 1143-1149, 2015. - B. Li, X.
Tang, and
**K. J. Chen**, "Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode, "*Appl. Phys. Lett.*, 106(9), 093505, 2015. - M. Hua,
C. Liu, S. Yang, S. Liu, K. Fu, Z. Dong, Y. Cai, B. Zhang,
and
**K. J. Chen**, "GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low Pressure Chemical Vapor Deposition Silicon Nitride (LPCVD-SiN_{x}) as Gate Dielectric,"*IEEE Elec. Dev. Lett.*, vol. 36, No. 5, pp. 448-450, 2015. - Y. Lu, B.
Li, X. Tang, Q. Jiang, S. Yang, Z. Tang, and
**K. J. Chen**, "Normally OFF Al_{2}O_{3}-AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation, "*IEEE Trans. Electron Devices*, vol. 62, No. 3, pp. 821-827, 2015. - S. Liu,
S. Yang, Z. Tang, Q. Jiang, C. Liu, M. Wang, B. Shen, and
**K. J. Chen**, "Interface/border trap characterization of Al_{2}O_{3}/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer, "*Appl. Phys. Lett.*, 106(5), 051605, 2015. - C. Liu,
S. Yang, S. Liu, Z. Tang, H. Wang, Q. Jiang, and
**K. J. Chen**, "Thermally Stable Enhancement-Mode GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier, "*IEEE Elec. Dev. Lett.*, vol. 36, No. 4, pp. 318-320, 2015. - S. Huang,
X. Liu, K. Wei, G. Liu, X. Wang, B. Sun, X. Yang, B. Shen,
C. Liu, S. Liu, M. Hua, S. Yang, and
**K. J. Chen**, "O_{3}-sourced atomic layer deposition of high quality Al_{2}O_{3}gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors, "*Appl. Phys. Lett.*, 106(3), 033507, 2015.

**2014:**

- S. Yang,
S. Liu, C. Liu, Y. Lu, and
**K. J. Chen**, "Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors,"*Appl. Phys. Lett.*, 105(22), 223508, 2014. **(Invited)****K. J. Chen**, S. Yang, Z. Tang, S. Huang, Y. Lu, Q. Jiang, S. Liu, C. Liu, and B. Li, "Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs, " Phys. Stat. Sol. (a), vol. 212, No. 5, pp. 1059-1065, 2015.- Q. Jiang,
Z. Tang, C. Zhou, S. Yang, and
**K. J. Chen**, "Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform,"*IEEE Trans. on Electron Devices*, vol. 61, No. 11, pp. 3808-3813, 2014. - A. M.
Kwan, Y. Guan, X. Liu, and
**K. J. Chen**, "A Highly Linear Integrated Temperature Sensor on a GaN Smart Power IC Platform,"*IEEE Trans. on Electron Devices*, vol. 61, No. 8, pp. 2970-2976, 2014. - Z. Tang,
S. Huang, X. Tang, B. Li, and
**K. J. Chen**, "Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs,"*IEEE Trans. on Electron Devices*, vol. 61, No. 8, pp. 2785-2792, 2014. - B. Li, X.
Tang, J. Wang, and
**K. J. Chen**, "P-doping-free III-nitride high electron mobility light-emitting diodes and transistors,"*Appl. Phys. Lett.*, 105(3), 032105, 2014. - S. Liu,
S. Yang, Z. Tang, Q. Jiang, C. Liu, M. Wang, and
**K. J. Chen**, "Al_{2}O_{3}/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer,"*IEEE Elec. Dev. Lett.*, vol. 35, No. 7, pp. 723-725, 2014. - M. Wang, Y.
Wang, C. Zhang, B. Xie, C. P. Wen, J. Wang, Y. Hao, W. Wu,
**K. J. Chen**, and B. Shen, "900 V/1.6 mΩ.cm^{2}Normally Off Al_{2}O_{3}/GaN MOSFET on Silicon Substrate,"*IEEE Trans. on Electron Devices*, vol. 61, No. 6, pp. 2035-2040, 2014. - Q. Jiang,
Z. Tang, C. Liu, Y. Lu, and
**K. J. Chen**, "A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs, "*IEEE Trans. on Electron Devices*, vol. 61, No. 3, pp. 762-768, 2014. - A. Zhang,
L. Zhang, Z. Tang, X. Cheng, Y. Wang,
**K. J, Chen**, and M. Chan, "Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components, "*IEEE Trans. on Electron Devices*, vol. 61, No. 3, pp. 755-761, 2014. - S. Huang,
K. Wei, G. Liu, Y. Zheng, X. Wang, L. Pang, X. Kong, X.
Liu, Z. Tang, S. Yang, Q. Jiang, and
**K. J. Chen**, "High-*f*_{MAX}High Johnson's Figure-of-Merit 0.2-um Gate AlGaN/GaN HEMTs on Silicon Substrate With AlN/SiN_{x}Passivation, "*IEEE Elec. Dev. Lett.*, vol. 35, No. 3, pp. 315-317, 2014. - C. Liu,
S. Liu, S. Huang, B. Li, and
**K. J. Chen**, "AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film,"*Physica Status Solidi (C)*, vol. 11, No. 3-4, pp. 953-956, 2014 - B. Li, Q.
Jiang, S. Liu, C. Liu, and
**K. J. Chen**, "Degradation of transient OFF-state leakage current in AlGaN/GaN HEMTs induced by ON-state gate overdrive,"*Physica Status Solidi (C)*, vol. 11, No. 3-4, pp. 928-931, 2014. - S. Yang,
Q. Jiang, B. Li, Z. Tang, and
**K. J. Chen**, "GaN-to-Si vertical conduction mechanisms in AlGaN/GaN-on-Si lateral heterojunction FET structures, "*Physica Status Solidi (C)*, vol. 11 No. 3-4, pp. 949-952, 2014. **(Invited) K. J. Chen**, A. M. H. Kwan, and Q. Jiang, "Technology for III-N heterogeneous mixed-signal electronics,"*Physica Status Solidi (a)*, vol. 211, No. 4, pp. 769-774, 2014.- S. Yang,
C. Zhou, Q. Jiang, J. Lu, B. Huang, and
**K. J. Chen**, "Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement,"*Appl. Phys. Lett.*, 104(1), 013504, 2014. - Q. Zhou,
S. Yang, W. Chen, B. Zhang, Z. Feng, S. Cai, and
**K. J. Chen**, "High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications,"*Solid-State Electronics*, vol. 91, pp. 19-23, 2014.

**2013:**

- S. Yang, Z. Tang, K. -Y. Wong, Y. -S.
Lin, C. Liu, Y. Lu, S. Huang, and
**K. J. Chen**, "High-quality interface in Al_{2}O_{3}/GaN/AlGaN/GaN MIS Structures with in situ pre-gate plasma nitridation,"*IEEE Elec. Dev. Lett.*, vol. 34, No. 12, pp. 1497-1499, 2013.

- Z. Tang, Q. Jiang, Y. Lu, S. Huang, S.
Yang, X. Tang, and
**K. J. Chen**, "600-V normally-off SiN_{x}/AlGaN/GaN MIS-HEMT with large gate swing and low current collapse,"*IEEE Elec. Dev. Lett.*, vol. 34, No. 11, pp. 1373-1375, 2013.

- Y. Wang, M. Wang, B. Xie, C. P. Wen, J.
Wang, Y. Hao, W. Wu,
**K. J. Chen**, and B. Shen, "High-Performance Normally-Off Al_{2}O_{3}/GaN MOSFET Using a Wet Etching-Based Gate Recess Technique,"*IEEE Elec. Dev. Lett.*, vol. 34, No. 11, pp. 1370-1372, 2013.

- Q. Zhou, W. Chen, C. Zhou, B. Zhang, and
**K. J. Chen**, "High sensitivity AlGaN/GaN lateral field-effect rectifier for zero-bias microwave detection,"*Electronics Lett.,*vol. 49, No. 22, 2013. - S. Huang, K. Wei, Z. Tang, S. Yang, C.
Liu, L. Guo, B. Shen, J. Zhang, X. Kong, G. Liu, Y. Zheng,
X. Liu, and
**K. J. Chen**, "Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation,"*J. Appl. Phys.,*114, 144509, 2013.

- S. Yang,
S. Huang, Q. Zhou, M. Schnee, Q.-T. Zhao, J. Schubert, and
**K. J. Chen**, "Fabrication and characterization of enhancement-mode high-K LaLuO_{3}-AlGaN/GaN MIS-HEMTs,"*IEEE Trans. on Electron Devices*, vol. 60, No. 10, pp. 3040-3046, 2013.

- Y. Lu, S. Yang, Q. Jiang, Z. Tang, B. Li,
and
**K. J. Chen**, "Characterization of V_{T}-instability in enhancement-mode Al_{2}O_{3}-AlGaN/GaN MIS-HEMTs,"*Phys. Sta. Sol. (C)*, 10, No. 11, pp. 1397-1400, 2013.

- C. Liu, S. Liu, S. Huang, and
**K. J. Chen**, "Plasma-enhanced atomic layer deposition of AlN epitaxial thin film for AlN/GaN heterostructure TFTs,"*IEEE Elec. Dev. Lett.*, vol. 34, No. 9, pp. 1106-1108, 2013.

- A. M. H.
Kwan, Y. Guan, X. Liu, and
**K. J. Chen**, "Integrated over-temperature protection circuit for GaN smart power ICs,"*Jpn. J. Appl. Phys.*, 52, 08JN15, 2013.

- S. Yang,
S. Huang, Q. Zhou, M. Schnee, Q.-T. Zhao, J. Schubert, and
**K. J. Chen,**"Enhancement-mode LaLuO_{3}-AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility-Transistors using fluorine plasma ion implantation,"*Jpn. J. Appl. Phys.*, 52, 08JN02, 2013.

**(Invited) K. J. Chen**, and S. Huang, "AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers,"*Semiconductor Science and Technology*, vol. 28, No. 7, 074015, 2013.

- X. Liu, C. Zhan, K. W. Chan, MHS. Owen,
W. Liu, D. Z. Chi, L. S. Tan,
**K. J. Chen**, and Y. C. Yeo, "AlGaN/GaN metal-oxide-semiconductor high-electron-mobility-transistors with a high breakdown voltage of 1400 V and a complementary metal-oxide-semiconductor compatible gold-free process,"*Jpn. J. Appl. Phys.*, 52, 04CF06, 2013.

- Q. Zhou, W. Chen, S. Liu, B. Zhang, Z.
Feng, S. Cai, and
**K. J. Chen**, "Schottky-contact technology in InAlN/GaN HEMTs for breakdown voltage improvement,"*IEEE Trans. on Electron Devices*, vol. 60, No. 3, pp. 1075-1081, 2013.

- Z. Tang, S. Huang, Q. Jiang, S. Liu, C.
Liu, and
**K. J. Chen**, "High-voltage (600V) low-leakage low-current-collapse AlGaN/GaN HEMTs with AlN/SiN_{x}passivation,"*IEEE Elec. Dev. Lett.*, vol. 34, No. 3, pp. 366-368, 2013.

- Q. Jiang, C. Liu, Y. Lu, and
**K. J. Chen**, "1.4 kV AlGaN/GaN HEMTs on a GaN-on-SOI platform,"*IEEE Elec. Dev. Lett.*, vol. 34, No. 3, pp. 357-359, 2013.

- S. Huang, Q. Jiang, S. Yang, Z. Tang, and
**K. J. Chen**, "Mechanism of PEALD-grown AlN passivation for AlGaN/GaN HEMTs: compensation of interface traps by polarization charges,"*IEEE Elec. Dev. Lett.*, vol. 34, No. 2, pp. 193-195, 2013.

- A. W. H. Kwan and
**K. J. Chen**, "A gate overdrive protection technique for improved reliability in AlGaN/GaN enhancement-mode HEMTs,"*IEEE Elec. Dev. Lett.*, vol. 34, No. 1, pp. 30-32, 2013.

- W. Chen, J. Zhang, Z. Wang, J. Wei, B.
Zhang, and
**K. J. Chen**, "Investigation of device geometry- and temperature-dependent characteristics of AlGaN/GaN lateral field-effect rectifier,"*Semicond. Sci. Technol.,*vol. 28, 015021, 2013.

- Z. Dong, S. Tan, Y. Cai, H. Chen, S. Liu,
J. Xu, L. Xue, G. Yu, Y. Wang, D. Zhao, K. Hou,
**K. J. Chen**, and B. Zhang, "5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing,"*Electronics Letters*, vol. 49, No. 3, pp. 221-222, 2013.

**2012:**

- X. Wang, S. Liu, D. Ma, X. Zheng, G. Chen, F.
Xu, N. Tang, B. Shen, P. Zhang, X. Caom, B. Wang, S.
Huang,
**K. J. Chen**, S. Zhou, and A. Yoshikawa, "Fe-doped InN layers grown by molecular beam epitaxy,"*Appl. Phys. Lett.*, 101, 171905, 2012.

- J. Fu, L. Yuan, and L. Yobas, and
**K. J. Chen**, "UV-illuminated Dielectrophoresis by Two-Dimensional Electron Gas (2DEG) in AlGaN/GaN Heterojunction,"*Phys. Stat. Sol. (a)*, 28042, 2012.

- Zhou, Q. Jiang, S. Huang, and
**K. J. Chen**, "Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si devices,"*IEEE Elec. Dev. Lett.*, 2012, vol. 33, No. 8, pp. 1132-1134, 2012.

- S. Yang, S. Huang, H. Chen, C. Zhou, Q.
Zhou
*,*M. Schnee, Q.-T. Zhao, J. Schubert, and**K. J. Chen,**"AlGaN/GaN MISHEMTs with High-K LaLuO_{3}Gate Dielectric,"*IEEE Elec. Dev. Lett.*, 2012, vol. 33, No. 7, pp. 979-981, 2012.

- X. Liu, C. Zhan, K. W. Chan
*,*W. Liu, L. S. Tan,**K****. J.****Chen**and Y.-C. Yeo, "AlGaN/GaN-on-Silicon MOS-HEMTs with Breakdown Voltage of 800 V and On-State Resistance of 3 mΩ.cm^{2}using a CMOS-Compatible Gold-Free Process," Appl. Phys. Express, 5, 066501, 2012.

*S*. Huang, Q. Jiang, S. Yang, C. Zhou*,*and**K. J. Chen**, "Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film, "*IEEE Elec. Dev. Lett.*, vol. 33, No. 4, pp. 516-518, 2012.

- S. Liu, Y. Cai, G. Gu, J. Wang, C. Zeng,
W. Shi, Z. Feng, H. Qin, Z. Cheng,
**K. J. Chen**, and B. Zhang, "Enhancement-mode operation of nano-channel Array (NCA) AlGaN/GaN HEMTs,"*IEEE Elec. Dev. Lett.*, vol. 33, No. 3, pp. 354-356, 2012.

- H. Chen, L. Yuan, Q. Zhou, C. Zhou
*,*and**K. J. Chen**, "Normally-off AlGaN/GaN power tunnel-junction FETs,"*Phys. Stat. Sol. C*, No. 3-4, pp. 871-874, 2012.

- S. Huang, S. Yang
*,*J. Roberts, and**K. J. Chen**, "Characterization of*V*th-instability in Al_{2}O_{3}/GaN/AlGaN/GaN MIS-HEMTs by quasi-static*C-V*measurement," Phys. Stat. Sol. C, No. 3-4, pp. 923-926, 2012.

- Q. Zhou, H.
Chen, C. Zhou, Z. H. Feng, S. J. Cai, and
**K. J. Chen**, "Schottky source/drain InAlN/AlN/GaN MISHEMT with enhanced breakdown voltage,"*IEEE Elec. Dev. Lett.*, vol. 33, No. 1, pp. 38-40, 2012.

- J. -Y. Lu, H. Ren, D. Deng, Y. Wang,
**K. J. Chen,**K. M. Lau, and T. Y. Zhang, "Thermally activated pop-in and indentation size effects in GaN films,"*J. Phys. D: Appl. Phys.*45 (2012) 085301. - S. Jha, H. E. Wang, O. Kutsay, E.V. Jelenkovic,
**K. J. Chen**, I. Bello, V. Kremnican, J. A. Zapien, "Exploiting nanostructure-thin film interfaces in advanced sensor device configurations",*Vacuum*, vol. 86, pp. 757-760, 2012.

**2011:**

- C. Ma, H.
Chen, C. Zhou, S. Huang, L. Yuan, J. Roberts, and
**K. J. Chen**,*J. Appl. Phys.*, 110, 114514, 2011.

- S. Huang, S. Yang, J.
Roberts, and
**K. J. Chen**, "Threshold voltage instability in Al_{2}O_{3}/GaN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors,"*Jpn. J. Appl. Phys.*, 50, 110202, 2011.

- S. Yang, S. Huang, H. Chen, M.
Schnee, Q.-T. Zhao, J. Schubert, and
**K. J. Chen**, "Characterization of high-k LaLuO_{3}thin film grown on AlGaN/GaN heterostructure by molecular beam deposition,"*Appl. Phys. Lett.*, 99, 182103, 2011.

- L. Yuan, H.
Chen, Q. Zhou, C. Zhou, and
**K. J. Chen**, "Gate-induced Schottky barrier lowering effect in AlGaN/GaN metal-2DEG tunnel junction field effect transistor,"*IEEE Elec. Dev. Lett.*, vol. 32, No. 9, pp. 1221-1223, 2011.

- B. K. Li, M. J. Wang,
**K. J. Chen**, and J. N. Wang, "Enhanced electroluminescence from the fluorine-plasma implanted Ni/Au-AlGaN/GaN Schottky diode,"*Appl. Phys. Lett., 99*, 062101, 2011.

- H. Chen, M.
J. Wang, and
**K. J. Chen,**"Enhancement-mode AlGaN/GaN HEMTs fabricated by standard fluorine ion implantation with a Si_{3}N_{4}energy-absorbing layer,"*Electrochem. Solid-State Lett*. vol. 14, No. 6, pp. H229-231, 2011.

- A. M. H.
Kwan, K. -Y. Wong, Xiaosen Liu, and
**K. J. Chen**, "High-gain and high-bandwidth AlGaN/GaN high electron mobility transistor comparator with high-temperature operation," Jpn, J. Appl. Phys. Vol. 50, No. 4, 2011.

- M. J. Wang and
**K. J. Chen**, "Kink effect in AlGaN/GaN HEMTs induced by drain and gate pumping,"*IEEE Electron Device Letters*, vol. 32, No. 4, pp. 482-484, Apr. 2011. - H.
Zhang, S. Bowman, and
**K. J. Chen**, "Efficient parameter extraction of microwave coupled-resonator filter using genetic algorithms,"*Int. J. of RF and Microwave Computer-Aided Engineering*, vol. 21, No. 2, pp. 137-144, Mar. 2011.

- J. -Y. Lu, D. Deng, Y. Wang,
**K. J. Chen**, K. M. Lau, and T. Y. Zhang, "Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation,"*AIP Advances,*1 (2011) 032132.

- L. Yuan,
H. Chen, and
**K. J. Chen**, "Normally-off AlGaN/GaN metal-2DEG tunnel-junction field-effect transistors,"*IEEE Electron Device Letters*, vol. 32, No. 3, pp. 303-305, 2011.

- J. Fu and
**K. J. Chen**, "Microspheres manipulation system by patterned AlGaN/GaN 2DEG electrodes"*Phys. Sta. Sol. (c)*, 8, No. 7-8, pp. 2479-2482, 2011.

- S. Huang, H.
Chen, and
**K. J. Chen**, "Surface properties of AlGaN/GaN heterostructures treated by fluorine plasma: an XPS study,"*Phys. Status Solidi C*, 8, No. 7-8, pp. 2200-2203, 2011.

- M. J. Wang and
**K. J. Chen**, "Improvement of the Off-State Breakdown Voltage with Fluorine Ion Implantation in AlGaN/GaN HEMTs,"*IEEE Trans. Electron Devices*, vol. 58, No. 2, pp. 460-465. 2011.

- X. Liu and
**K. J. Chen**, "GaN Single-Polarity Power Supply Bootstrapped Comparator for High Temperature Electronics,"*IEEE Electron Device Letters*, vol. 32, No. 1, pp. 27-29, Jan. 2011.

**(Invited)****K. J. Chen**and C. Zhou, "Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT Technology,"*Phys. Sta. Sol. (a)*, 208, No. 2, pp. 434-438. Feb. 2011.

**2010:**

- Z. H. Feng, R. Zhou, S. Y. Xie, J. Y.
Yin, J. X. Fang, B. Liu, W. Zhou,
**K. J. Chen**, S. J. Cai, "18-GHz 3.65W/mm Enhancement-mode AlGaN/GaN HFET using Fluorine Plasma Ion Implantation,"*IEEE Electron Device Letters*, vol. 31, no. 12, pp. 1386-1388, Dec. 2010.

- J. -Y. Lu, Z.-J. Wang, D. -M. Deng, Y.
Wang,
**K. J. Chen**, K. M. Lau, and T.-Y. Zhang, "Determining phonon deformation potentials of hexagonal GaN with stress modulation,"*J. Appl. Phys*., 108, 123420, 2010.

- W. Chen, C.
Zhou, and
**K. J. Chen,**"High-current-density high-voltage normally-off AlGaN/GaN hybrid-gate HEMT with low on-resistance,"*Electronics Letters*, vo. 46, No. 24, pp. 1626-1627, 2010.

- T. Chang, T. -H. Hsu, E. Y. Chang, Y. -C.
Chen, H. -D. Trinh and
**K. J. Chen**, "Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage,"*Electronics Letters*, vol. 46, No. 18, pp. 1280-1281, 2010.

- S. Huang, H.
Chen, and
**K. J. Chen**, "Effect of the fluorine plasma treatment on the surface potential and Schottky barrier height of AlGaN/GaN heterostructures,"*Appl. Phys. Lett.*, 96, 233510, 2010.

- K. -Y. Wong,
W. Chen, and
**K. J. Chen**, "Characterization and analysis of the temperature-dependent on-resistance in AlGaN/GaN lateral field-effect rectifiers,"*IEEE Trans. Electron Devices*, vol. 57, No. 8, pp. 1924-1929, 2010.

- M. J. Wang and
**K. J. Chen**, "Off-state Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique"*IEEE Trans. Electron Devices,*vol. 57, No. 7, pp. 1492-1496, 2010.

- K. -Y. Wong,
W. Chen, X. Liu, C. Zhou, and
**K. J. Chen**, "GaN Smart Power IC Technology,"*Phys. Sta. Sol. (b)*, 247, No. 7, pp. 1732-1734, 2010.

- M. J. Wang, C. C. Cheng, C. D.
Beling, S. Fung, and
**K. J. Chen**, "Modulation of polarization field by fluorine ions in AlGaN/GaN heterostructures revealed by positron annihilation spectroscopy,"*Phys. Sta. Sol. (a)*, 207, No. 6, pp. 1332-1334, 2010.

- Zhou, W. J.
Chen, E. L. Piner, and
**K. J. Chen**, "Schottky-Ohmic Drain AlGaN/GaN Normally-Off HEMT with Reverse Drain Blocking Capability,"*IEEE Electron Device Letters*, vol. 31, No. 7, pp. 668-670, 2010.

- S. K. Jha, C. P. Liu, Z. H. Chen,
**K. J. Chen**, I. Bello, J. A. Zapien, W. Zhang, and S.-T. Lee, "Integrated Nanorods and Heterostructure Field Effect Transistors for Gas Sensing,"*J. Phys. Chem. C*, 114, pp. 7999-8004, 2010.

- Q. Zhou, K.
-Y. Wong, W. J. Chen, and
**K. J. Chen**, "Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode,"*IEEE Microwave and Wireless Components Letters*, vol. 20, No. 5, pp. 277-279, 2010.

- K. -Y. Wong,
W. J. Chen, and
**K. J. Chen**, "Integrated Voltage Reference Generator for GaN Smart Power Chip Technology"*IEEE Trans. Electron Devices,*vol. 57, No. 4, pp. 952-955, Apr. 2010.

- C. H. Zhou,
W. J. Chen, E. L. Piner
*,*and**K. J. Chen**, "AlGaN/GaN lateral field-effect rectifier with intrinsic forward current limiting capability,"*Electronics Letters*, vol. 46, No. 6, pp. 445-447, Mar. 2010.

- C. H. Zhou,
W. J. Chen, E. L. Piner
*,*and**K. J. Chen**, "AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier with Punch through Breakdown Immunity and Low On-Resistance,"*IEEE Electron Device Letters*, vol. 31. No. 1, pp. 5-7, 2010.

**2009:**

- B. K. Li, M. J. Wang,
**K. J. Chen**, and J. N. Wang, "Fermi-level depinning and hole injection induced two-dimensional electron related radiative emissions from a forward biased Ni/Au-AlGaN/GaN Schottky diode,"*Appl. Phys. Lett*. 95, 232111, 2009.

- K. -Y. Wong,
W. J. Chen, Q. Zhou
*,*and**K. J. Chen**, "Zero-Bias Mixer Based on AlGaN/GaN Lateral Field-Effect diodes for High-Temperature Wireless Sensor and RFID Applications,"*IEEE Trans. Electron Devices*, vol. 56, No. 12, pp. 2888-2894, Dec. 2009.

- J. Lv, Z. Yang, G. Z. Yan, Y. Cai, B.
Zhang, and
**K. J. Chen**, "Fabrication of Large-area Suspended MEMS Structures Using GaN-on-Si Platform,"*IEEE Electron Device Lett.*, vol. 30, No. 10, pp. 1045-1047, 2009.

- H. -Y. Huang, Z. -Y. Li, J. -Y. Lu, Z.
-J. Wang, C.
-S. Wang, K. M. Lau,
**K. J. Chen**, and T. -Y. Zhang, "Microbridge tests on gallium nitride thin films," J. Micromech. Microeng., vol. 19, 095019, Sep. 2009.

- L. Yuan, M.
Wang, and
**K. J. Chen**, "On the stability of fluorine ions in AlGaN/GaN heterostructure: a molecular dynamics study,"*Phys. Sta. Sol. (c)*, vol. 6, No. S2, pp. S944-S947, June 2009.

- M. Wang, L.
Yuan, F. Xu, B. Shen, and
**K. J. Chen**, "Study of diffusion and thermal stability of fluorine ions in GaN by Time-of-Flight Secondary Ion Mass Spectroscopy,"*Phys. Sta. Sol. (c)*, vol. 6, No. S2, pp. S952-S955, June 2009.

**W. Chen, K. -Y. Wong,****and****K. J. Chen****,****"HEMT-compatible lateral field-effect rectifier using CF**_{4}plasma treatment,"*Phys. Sta. Sol. (c)*, vol. 6, No. S2, pp. S948-S951, June 2009.

- W. Chen, K.
Y. Wong, and
**K. J. Chen**, "Single-Chip Boost Converter using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally-off HEMT,"*IEEE Electron Device Lett.*, vol. 30, No. 5, pp. 430-432, 2009.

- M. J. Wang,
L. Yuan, F. Xu, B. Shen, and
**K. J. Chen**, "Diffusion mechanism and the thermal stability of fluorine ions in GaN after ion implantation,"*J. Appl. Phys.*, 105, 083519, 2009.

- H. Zhang and
**K. J. Chen**, "Design of dual-band rat-race couplers,"*IET Microwave, Antenna and Propagation*, vol. 3, No. 3 pp. 514-521, 2009.

- M. J. Wang,
L. Yuan,
**K. J. Chen**, "Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy",*Appl. Phys. Lett*., 94, 061910, 2009.

- X. Huo, G. -W. Xiao, P. C. H. Chan, and
**K. J. Chen,**"Silicon-on-Organic Integration of a 2.4 GHz VCO using High-Q Copper Inductors and Solder-Bumped Flip Chip Technology,"*IEEE Trans. Components and Packaging Technology*, vol. 32, No. 1, pp. 191-196, 2009.

- R. Wang, Y.
Cai, and
**K. J. Chen**, "Temperature Dependence and Thermal Stability of Planar-Integrated Enhancement/Depletion-mode AlGaN/GaN HEMTs and Digital Circuits", Solid State Electronics, 53, pp. 1-6, 2009.

**2008:**

- L. Yuan, M.
J. Wang, and
**K. J. Chen**, "Molecular dynamics calculation of the fluorine ions' potential energies in AlGaN/GaN Heterostructures,"*J. Appl. Phys*., 104, 116106, 2008.

- W. Chen, K.
Y. Wong, W. Huang, and
**K. J. Chen**, "High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors,"*Appl. Phys. Lett.*, vol. 92, 253501, 2008.

**(Invited article)**B. K. Li,**K. J. Chen**, K. M. Lau, W. K. Ge, and J. N. Wang, "Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity,"*Phys. Stat. Sol. (c)*, vol. 5, No. 6, pp. 1892-1894, 2008

- R. Wang, Y.
C. Wu, and
**K. J. Chen,**"Gain Improvement of Enhancement-mode AlGaN/GaN HEMTs Using Dual-Gate Architectures,"*Jpn. J. Appl. Phys.,*Vol. 47, No. 4, pp. 2820-2823, 2008.

- S. K. Jha, C. Surya,
**K. J. Chen**, K. M. Lau, and E. Jelencovic, "Low-frequency noise properties of double channel AlGaN/GaN HEMTs,"*Solid-State Electronics*, 52, pp. 606-611, 2008.

- L. Yuan, M.
J. Wang,
**K. J. Chen**, "Fluorine Plasma Ion Implantation in AlGaN/GaN Heterostructures: A Molecular Dynamics Simulation Study,"*Appl. Phys. Lett.*, 92, 102109, 2008.

- H. Zhang and
**K. J. Chen**, "A Second-Order Dual-Band Bandpass Filter Using a Dual-Band Admittance Inverter,"*Microwave and Optical Technology Lett.*, vol. 50, No. 5, pp. 1184-1187, May 2008..

- J. W. Zhang,
H. Zhang, S. G. Lu, Z. K. Xu, and
**K. J. Chen**, "The Effect of Physical Design Parameters on the RF and Microwave Performance of the BST Thin Film Planar Interdigitated Varactors"*Sensors and Actuators A: Physical*, vol. 141, pp. 231-237, 2008.

- B. K. Li, W. Ge, J. N. Wang, and
**K. J. Chen**, "Persistent photoconductivity and carrier transport in AlGaN/GaN heterostructures treated by fluorine plasma,"*Appl. Phys. Lett.*92, 082105, 2008.

**2007:**

- X. Wang, B.
Z. Wang, H.
Zhang, and
**K. J. Chen**, "A Tunable Bandstop Resonator Based on a Compact Slotted Ground Structure,"*IEEE Trans. Microwave Theory and Techniques*, vol. 55, No. 9, pp. 1912-1918, Sep. 2007.

- R. Wang, Y.
Cai, W. C. -W. Tang, K. M. Lau, and
**K. J. Chen**, "Integration of Enhancement and Depletion-mode AlGaN/GaN MIS-HFETs by Fluoride-based Plasma Treatment,"*Phys. Stat. Sol. (a),*No. 6, 2023-2027, June 2007.

- K. -Y. Wong,
W. Tang, K. M. Lau, and
**K. J. Chen**, "Surface Acoustic Wave Device on AlGaN/GaN Heterostructure Using Two-Dimensional Electron Gas Interdigital Transducers,"*Appl. Phys. Lett.*, vol. 90, 213506, May 2007.

- Z. Cheng, Y.
Cai, J. Liu, Y. G. Zhou, K. M. Lau, and
**K. J. Chen,**"1.9-GHz Low Noise Amplifier Using High-Linearity and Low-Noise Composite-Channel HEMTs,"*Microwave and Optical Technology Lett.,*vol. 49, No. 6, pp. 1360-1362, June 2007.

- Y, Cai, Z.
Cheng, Z. Yang, W. C. -W. Tang, K. M. Lau, and
**K. J. Chen**, "High Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits,"*IEEE Electron Device Lett.*, vol. 28, No. 5, pp. 328-331, May, 2007.

- R. Wang,
Y.Cai, W. C. -W. Tang, K. M. Lau, and
**K. J. Chen**, "Device Isolation by Plasma Treatment for Planar Integration of Enhancement/Depletion-Mode AlGaN/GaN High Electron Mobility Transistors,"*Jpn J. Appl. Phys,*vol. 46, No. 4B, pp. 2330-2333, 2007.

- D. Song, J.
Liu, Z. Cheng, W. C. -W. Tang, K. M. Lau, and
**K. J. Chen,**"Normally Off AlGaN/GaN Low-Density Drain HEMT (LDD-HEMT) With Enhanced Breakdown Voltage and Reduced Current Collapse,"*IEEE Electron Device Lett.*, vol. 28, No. 3, pp. 189-191, Mar. 2007.

- H. Zhang and
**K. J. Chen**, "A Stub Tapped Branch-Line Coupler for Dual-Band Operations,"*IEEE Microwave and Wireless Components Lett.*, vol. 17, No. 2, pp. 106-108, Feb. 2007.

- Z. Cheng, Y.
Cai, J. Liu, Y. G. Zhou, K. M. Lau, and
**K. J. Chen,**"A Low Phase-Noise X-Band MMIC VCO Using High-Linearity and Low-Noise Composite-Channel Al_{0.3}Ga_{0.7}N/Al_{0.05}Ga_{0.95}N/GaN HEMTs",*IEEE Trans. Microwave Theory and Techniques*, vol. 55, No. 1, pp. 23-29, Jan 2007.

- J. Liu, Y.
Zhou, J. Zhu, Y.
Cai, K. M. Lau, and
**K. J. Chen**, "DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs,"*IEEE Trans. Electron Devices*, vol.. 54, No. 1, pp. 2-10, Jan. 2007.

**2006:**

- X. Huo, P. C. H. Chan,
**K. J. Chen**, and H. Luong, "A Physical Model for On-Chip Spiral Inductors with Accurate Substrate Modeling,"*IEEE Trans. Electron Devices*, vol. 53, No. 12, pp. 2942-2949, Dec. 2006.

- R. Wang, Y.
Cai, C. -W. Tang, K. M. Lau, and
**K. J. Chen**, "Enhancement-Mode Si_{3}N_{4}/AlGaN/GaN MISHFETs,"*IEEE Electron Device Letters*, vol. 27, No. 10, pp. 793-795, Oct. 2006.

- Y. Cai, Y. G.
Zhou, K. M. Lau, and
**K. J. Chen**, "Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-based Plasma Treatment: From Depletion Mode to Enhancemend Mode,"*IEEE Trans. Electron Devices*, vol. 53, No. 9, pp. 2207-2215, Sep. 2006.

- Y. Cai, Z.
Cheng, W. C. K. Tang, K. M. Lau, and
**K. J. Chen**, "Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using CF_{4}Plasma Treatment,"*IEEE Trans. Electron Devices*, vol. 53, No. 9, pp. 2223-2230, Sep. 2006.

- R. Wang, Y.
Cai, W. Tang, K. M. Lau, and
**K. J. Chen**, "Planar Integration of E/D-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment,"*IEEE Electron Device Letters*, vol. 27, No. 8, pp. 633-635, Aug. 2006.

- L. L. W.
Leung, J. -W. Zhang, W. C. Hon, and
**K. J. Chen**, "Characterization and Attenuation Mechanisms of CMOS Compatible Micromachined Edge-suspended Coplanar Waveguides on Low-resistivity Silicon Substrate,"*IEEE Trans. Advanced Packaging*, vol. 29, No. 3, pp. 496-503, Aug. 2006.

- Z. Yang, R.
Wang, D. Wang, B. Zhang. K. M. Lau, and
**K. J. Chen**, "GaN on Patterned Silicon (GPS) Technique for GaN-based MEMS,"*Sensors and Actuators A: Physical*, vol. 130-131, pp. 371-378, Aug. 2006.

- Y. Cai, Y.
G. Zhou, K. M. Lau, and
**K. J. Chen**"Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage,"*IEICE Trans. on Electronics*, vol. E89-C, No. 7, 1025-1030, July, 2006.

- S. Jia, Y.
Cai, D. Wang, B. Zhang, K. M. Lau, and
**K. J. Chen**"Enhancement-Mode AlGaN/GaN HEMTs on Silicon Substrate,"*IEEE Trans. on Electron Devices*, vol. 53, No. 6, pp. 1474-1477, June, 2006.

- J. Liu, Y. G.
Zhou, J. Zhu, K. M. Lau, and
**K. J. Chen**, "AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch,"*Phys. Stat. Sol. (c)*, vol. 3, No. 6, pp. 2312-2316, 2006.

- Z. Yang, R.
N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and
**K. J. Chen**"Fabrication of suspended GaN microstructures using GaN-on-patterned-silicon (GPS) technique,"*Phys. Stat. Sol. (a)*, vol. 203, No. 7, pp. 1721-1724, May 2006.

- L. L. W.
Leung and
**K. J. Chen**, "CAD Equivalent Circuit Modeling of Attenuation and Cross-Coupling for Edge-Suspended Coplanar Waveguides on Lossy Silicon Substrate,"*IEEE Trans. Microwave Theory and Techniques*, vol. 54, No. 5, pp. 2249-2255, May 2006.

- H. Zhang
**K. J. Chen**, "Bandpass Filters with Reconfigurable Transmission Zeros Using Varactor-Tuned Tapped Stubs,"*IEEE Microwave and Wireless Components Lett.*,vol. 16, No. 5, pp. 249-251, May 2006.

- S. Jia, Y.
Cai, D. Wang, B. Zhang, K. M. Lau, and
**K. J. Chen**"Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors on Silicon Substrate,"*Phys. Sta. Sol. (c)*, vol. 3, pp. 2368-2372, 2006.

- Z. Feng, S. J. Cai,
**K. J. Chen**, and K. M. Lau, "Isoelectronic Indium Surfactant-doped AlGaN/GaN High Electron Mobility Transistors,"*Appl. Phys. Lett.*, vol. 88, 122113, 2006.

- H. Zhang
**K. J. Chen**, "Miniaturized Coplanar Waveguide Bandpass Filters Using Multi-Section Stepped Impedance Resonators,"*IEEE Trans. Microwave Theory and Techniques*, vol. 54, No. 3, pp. 1090-1095, 2006.

- Z. Yang, R.
Wang, D. Wang, B. Zhang. K. M. Lau, and
**K. J. Chen**, "Mechanical Characterization of Suspended GaN Microstructures by GaN-on-Patterned-Silicon Technique,"*Appl. Phys. Lett.*, vol. 88, 041913, 2006.

- J. Liu, Y. G.
Zhou, J. Zhu, K. M. Lau, and
**K. J. Chen**, "AlGaN/GaN/InGaN/GaN Double Heterojunction HEMTs with an InGaN-Notch for Enhanced Carrier Confinement,"*IEEE Electron Device Letters*, vol. 27, No.1, pp. 10-12, 2006.

**2005:**

- Z. Feng, S. J. Cai,
**K. J. Chen**, and K. M. Lau, "Enhanced-Performance of AlGaN-GaN HEMTs Grown on Grooved Sapphire Substrates,"*IEEE Electron Device Letters*, vol. 26, No. 12, pp. 870-872, Dec. 2005.

- L. L. W.
Leung and
**K. J. Chen**, "Microwave Characterization and Modeling of High Aspect Ratio Through-Wafer Interconnect Vias in Silicon substrates,"*IEEE Trans. on Microwave Theory and Techniques,*, vol. 53, No. 8, pp. 2472-2480, Aug. 2005.

- Z. Cheng, J.
Liu, Y. G. Zhou, Y. Cai,
**K. J. Chen**, and K. M. Lau, "Broadband Microwave Noise Characteristics of High-Linearity Composite-Channel Al_{0.3}Ga_{0.7}N/Al_{0.05}Ga_{0.95}N/GaN HEMTs,"*IEEE Electron Device Letters*, vol. 26,No. 8, pp. 521-523, Aug. 2005.

- Y. Cai, Y. G.
Zhou,
**K. J. Chen**, and K. M. Lau, "High-Performance Enhancement-Mode AlGaN/GaN HEMTs using Fluoride-based Plasma Treatment,"*IEEE Electron Device Letters*, vol. 26, No. 7, pp. 435-437, 2005.

- S. Chu, Y. G.
Zhou,
**K. J. Chen**, and K. M. Lau, "Q-Factor Characterization of Radio-Frequency GaN-based Metal-Semiconductor-Metal Planar Inter-Digitated Varactors,"*IEEE Electron Device Letters*, vol. 26, No. 7, pp. 432-434, 2005.

- H. Zhang and
**K. J. Chen**, "A Tri-Section Stepped-Impedance Resonator for Cross-Coupled Bandpass Filters,"*IEEE Microwave and Wireless Components Letters*, vol. 15, No. 6, pp. 401-403, June, 2005.

- R. M. Chu, Y. G. Zhou, J. Liu, D. Wang
*,***K. J. Chen**, and K. M. Lau, "AlGaN-GaN Double-Channel HEMTs,"*IEEE Trans. Electron Devices*, vol. 52, No. 4, pp. 438-446, Apr. 2005.

- Y. G. Zhou, R. M. Chu, J. Liu
*,***K. J. Chen**, and K. M. Lau, "Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth,"*Phys. Sta. Sol. (c)*, vol. 2, No. 7, pp. 2663-2667, 2005.

- J. Liu, Y. G.
Zhou, R. M. Chu,
Y. Cai,
**K. J. Chen**, and K. M. Lau, "Highly Linear Al_{0.3}Ga_{0.7}N/Al_{0.05}Ga_{0.95}N/GaN Composite-Channel HEMTs,"*IEEE Electron Device Letters*, vol. 26, No. 3, pp. 145-147, Mar. 2005.

- S. Jia, Y.
Dikme, D. Wang,
**K. J. Chen**, K. M. Lau, and M. Heuken, "AlGaN-GaN HEMTs on Patterned Silicon (111) Substrate,"*IEEE Electron Device Letters*, vol. 26, No. 3, pp. 130-132, Mar. 2005.

- D. Wang, S.
Jia,
**K. J. Chen**, K. M. Lau, Y. Dikme, P. van Gemmern, Y. C. Lin, M. Heuken, and R. H. Jansen, "Micro-Raman Scattering Study of the Stress Distribution in GaN films grown on patterned Si(111) substrate using metalorganic vapor deposition,"*Journal of Applied Physics*, vol. 97, 056103, Mar. 2005.

- J. W. Zhang,
W. C. Hon, L. L. W. Leung, and
**K. J. Chen**, "CMOS-Compatible Micromachining Techniques for Fabricating High-Performance Edge-suspended RF/Microwave Passive Components on Silicon Substrates,"*Journal Of Micromechanics and Microengineering,*vol. 15, No. 2, pp. 328-335, Feb. 2005.

- Y. Cai
*,*Y. G. Zhou, and**K. J. Chen**, and K. M. Lau, "III-Nitride Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistors Using Sputtered AlON Thin Films,"*Appl. Phys. Lett.*, vol. 86, No. 3, 032109, Jan. 2005.

- Y. G. Zhou, D. Wang, R. M. Chu, C. -W.
Tang, Y. Qi, Z. Lu,
**K. J. Chen**, and K. M. Lau, "Correclation of In-situ Reflectance Spectrum and Resistivity of GaN/Al_{2}O_{3}Interfacial Layer in Metalorganic Chemical Vapor Deposition,"*IEEE/TMS Journal of Electronic Materials,*vol. 34, pp. 112-118, Jan. 2005.

**2004:**

- Wang, Y.
Dikme, S. Jia,
**K. J. Chen**, K. M. Lau, P. van Gemmern, Y. C. Lin, H. Kalisch, R. H. Jansen, and M. Heuken, "Characterization of GaN grown on patterned Si(111) substrate,"*Journal of Crystal Growth*, vol. 272, pp. 489-495, Dec. 2004.

- T. Suligoj, H. Liu, J. K. O. Sin, K. Tsui, R. M. Chu,
**K. J. Chen**, P. Biljanovic, and K. L. Wang, "A Low-Cost Horizontal Current Bipolar Transistor (HCBT) Technology for the BiCMOS Integration with FinFETs,"*Solid-State Electronics,*vol. 48, pp. 2047-2050, Nov. 2004.

**K. J. Chen**, K. W. Chan, M. K. W. Wong, N. M. K. Fok, N. C. H. Fan, "High-Performance Large-Inductance Embedded Inductors in Thin Array Plastic Packaging (TAPP) for RF System-in-Package Applications,"*IEEE Microwave and Wireless Components Letters,*, vol. 14, No. 9, pp. 449-451, Sep. 2004.

- L. L. W.
Leung, W. C. Hon, and
**K. J. Chen**, "Low-loss Coplanar Waveguides Interconnects on Low-resistivity Silicon Substrate,"*IEEE Trans. on Components and Packaging Technologies,*, vol. 27, No. 3, pp. 507-512, Sep. 2004.

**K. J. Chen**, W. C. Hon, J. -W. Zhang, and L. L. W. Leung, "CMOS-Compatible Micromachined Edge-suspended Inductors with High Q-factors and Self-resonance Frequencies,"*IEEE Electron Device Letters,*, vol. 25, No. 6, pp. 363-365, June, 2004.

- L. L. W.
Leung
*,***K. J. Chen**, X. Huo, and P. C. H. Chan, "Low-loss Microwave Filter on CMOS-grade Standard Silicon Substrate with a Low-k BCB Dielectric,"*Microwave and Optical Technology Letters*, vol. 40, No. 1, pp. 9-11, Jan. 2004.

**2003:**

- R. M. Chu, Y. G. Zhou,
**K. J. Chen**, and K. M. Lau, "Admittance Characterization and Analysis of Trap States in AlGaN/GaN Heterostructures,"*Phys. Sta. Sol.(c)*, No. 7, pp. 2400-2403, Oct. 2003.

- K. Tsui
*,***K. J. Chen**, S. Lam, and M. Chan, "0.5-um Silicon-on-Sapphire Metal Oxide Semiconductor Field Effect Transistor for RF Power Amplifier Application,"*Jpn. J. Appl. Phys.*, vol. 42, Part 1, No. 8, pp. 4982-4986, Aug. 2003.

**K. J. Chen**, G. F. Niu, "Logic Synthesis and Circuit Modeling of a Programmable Logic Gate based on Controlled Quenching of Series-Connected Negative Differential Resistance Devices,"*IEEE J. Solid-State Circuits*, vol. 38, No. 2, pp. 312-318, Feb. 2003.

**Recent
Conference Papers (2003-present)**

**2017:**

- M. Hua, J. Wei, Q. Bao, J. He, Z. Zhang, Z.
Zheng, J. Lei, and
**K. J. Chen**, "Reverse-Bias Stability and Reliability of Hole-Barrier-Free E-mode LPCVD-SiNx/GaN MIS-FETs,"*2017 Int. Electron Device Meeting (IEDM 2017)*, San Francisco, CA, USA, Dec. 4-6, 2017. - J. Lei, J. Wei, G. Tang, Q. Qian, M. Hua,
Z. Zhang, Z. Zheng, and
**K. J. Chen**, "An Interdigitated GaN MIS-HEMT/SBD Normally-Off Power Switching Device with Low ON-resistance and Low Reverse Conduction Loss,"*2017 Int. Electron Device Meeting (IEDM 2017)*, San Francisco, CA, USA, Dec. 4-6, 2017. - R. Xie, G. Xu, X. Yang, H. Wang, M. Tian, Y.
Tian, F. Zhang, W. Chen, L. Wang, and
**K. J. Chen**, "Switching Transient Analysis for Normally-off GaN Transistors with p-GaN Gate in a Phase-leg Circuit" in*Proc. Energy Conversion Congress and Exposition (ECCE)*, Cincinnati, OH, USA, 2017. - Q. Qian, Z. Zhang, M. Hua, J. Wei, J. Lei,
and
**K. J. Chen**, “Low-Resistance Contact to Single-Layer MoS_{2}by Depositing Ultrathin High-k Dielectric with Remote N_{2}Plasma Treatment as Tunneling Layer,”2017*International Conference on Solid State Device and Materials (SSDM 2017)*Sendai, Japan, Sep. 19-21, 2017. - G. Tang, J.
Wei, Z. Zhang, M. Hua, X. Tang, H. Wang, and
**K. J. Chen**, “Characterization and Analysis of Dynamic Ron of GaN-on-Si lateral Power Devices with Grounded and Floating Si Substrate,”*12*, Strasbourg, France, July. 24- 28, 2017.^{th}Int. Conf. on Nitride Semiconductors (ICNS-12) - J. He, M. Hua,
G. Tang, Z. Zhang, and
**K. J. Chen**, “Comparison of E-mode Fully recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Stack,”*12*, Strasbourg, France, July. 24- 28, 2017.^{th}Int. Conf. on Nitride Semiconductors (ICNS-12) - M. Hua, Q. Qian, J. Wei, Z. Zhang, G. Tang,
and
**K. J. Chen**, “PBTI and NBTI of Fully-recessed E-mode LPCVD-SiNx/GaN MIS-FETs with PECVD-SiNx Interfacial Protection Layer,”*12*, Strasbourg, France, July. 24- 28, 2017.^{th}Int. Conf. on Nitride Semiconductors (ICNS-12) - Q. Bao, Y. Li,
Z. Zhang, Q. Qian, J. Lei, G. Tang, B. Huang and
**K. J. Chen**, “Effective Cross-Plane Thermal Conductivity of GaN-on-Si (111) Epi-layers Evaluated by 3-Omega Technique,”*12*, Strasbourg, France, July. 24- 28, 2017.^{th}Int. Conf. on Nitride Semiconductors (ICNS-12) - G. Tang, H.
Wang, J. Lei, and
**K. J. Chen**, “Monolithic Intergration of E/D-Mode HEMTs for Logic Circuit on the p-GaN Gate Technology Platform,”*12*, Strasbourg, France, July. 24- 28, 2017.^{th}Int. Conf. on Nitride Semiconductors (ICNS-12) - M.
Hua, Q. Qian, J. Wei, Z. Zhang, G. Tang, and
**K. J. Chen**, "TDDB and PBTI Characterizations of Fully-recessed E-mode GaN MIS-FETs with LPCVD-SiN_{x}/PECVD-SiN_{x}Gate Dielectric Stack,"*2017 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2017)*Indian Wells. CA, USA, May 22-26, 2017. - M.
Hua, Z. Zhang, Q. Qian, J. Wei, Q. Bao, G. Tang, and
**K. J. Chen**, "High-Performance Fully-recessed Enhancement Mode GaN MIS-FETs with Crystalline Oxide Interlayer,"*2017 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD'17)*, Sapporo, Japan, May 28- June 1, 2017.__(Charitat Award: for the best Young Researcher)__ - G.
Tang, J. Wei, Z. Zhang, X. Tang, M. Hua, H. Wang, and
**K. J. Chen**, "Impact of substrate termination on dynamic performance of GaN-on-Si lateral power devices,"*2017 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD'17)*, Sapporo, Japan, May 28- June 1, 2017. - J.
Wei, Y. Wang, M. Zhang, H. Jiang, and
**K. J. Chen**, "High-speed power MOSFET with low reverse transfer capacitance using a trench/planar gate architecture,"*2017 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD'17)*, Sapporo, Japan, May 28- June 1, 2017. - J. Wei, M. Zhang, H. Jiang, H. Wang, and
**K. J. Chen**, "Charge storage effect in SiC trench MOSFET with a floating p-shield and its impact on dynamic performances,"*2017 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD'17)*, Sapporo, Japan, May 28- June 1, 2017. - S. Yang, C. Zhou, S. Han, K. Sheng, and
K. J. Chen, "Buffer Trapping-Induced RON Degradation in GaN-
on-Si Power Transistors: Role of Electron Injection from Si
Substrate,".
*2017 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD'17)*, Sapporo, Japan, May 28- June 1, 2017.

**2016:**

- Z. Zhang, B. Li, X. Tang, Q. Qian, M.
Hua, B. Huang, and
**K. J. Chen**, " First-Principles Study of GaN Surface Electronic Structures with Ga, O or N Adatom,"*47th IEEE Semiconductor Interface Specialists Conference (SISC)*, San Diego, CA, USA, Dec. 8-10, 2016. - Z. Zhang, B. Li, X. Tang, Q. Qian, M.
Hua, B. Huang, and
**K. J. Chen**, "Nitridation of GaN Surface for Power Device Application: A First-Principles Study,"*2016 Int. Electron Device Meeting (IEDM 2016)*, San Francisco, CA, USA, Dec. 5-7, 2016. - M. Hua, Z. Zhang, J. Wei, J. Lei, G.
Tang, K. Fu, Y. Cai, B. Zhang, and
**K. J. Chen**, "Integration of LPCVD-SiN_{x}Gate Dielectric with Recessed-gate E-mode GaN MIS-FETs: Toward High Performance, High Stability and Long TDDB Lifetime,"*2016 Int. Electron Device Meeting (IEDM 2016)*, San Francisco, CA, USA, Dec. 5-7, 2016. - S.
Yang, Z. Tang, Y. Lu, Q. Jiang, and A. Zhang, "Role of
shallow surface traps and polarization charges in
nitride-based passivation for AlGaN/GaN heterojunction
FET,"
*IFWS 2016*, Beijing, China, Nov. 15-17, 2016. - B.
Li, X. Tang, J. Wang, and
**K. J. Chen**, "Enhancing Dynamic Performance of Gan-on-Si Power Devices With on-chip Photon Pumping,"*2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2016)*Hangzhou, China, Oct. 25-28, 2016. - H. Wang, R. Xie, C. Liu, J. Wei, G.
Tang, and
**K. J. Chen**, " Maximizing the Performance of 650 V p-GaN Gate HEMTs: Dynamic*R*_{ON}Characterization and Gate-Drive Design Considerations, "*2016 IEEE Energy Conversion Cong. and Expo. (ECCE)*, Milwaukee, WI, USA, Sept. 18-22, 2016. - R. Xie, H. Wang, G. Tang, X. Yang, and
**K. J. Chen**, " An Analytical Model for False Turn-On Evaluation of GaN Transistor in Bridge-Leg Configuration, "*2016 IEEE Energy Conversion Cong. and Expo. (ECCE)*, Milwaukee, WI, USA, Sept. 18-22, 2016. - S. Yang, S. Liu, C. Liu, M. Hua, G.
Longobardi, F. Udrea, and
**K. J. Chen**, " Performance Enhancement and Characterization Techniques for GaN Power Devices, "*2016 Compound Semiconductor Week (CSW 2016),*Toyama, Japan, June 26-30, 2016. - J.
Wei, S. Liu, B. Li, X. Tang, Z. Zhang, G. Tang, and
**K. J. Chen**, " Critical Heterostructure Design for Low On-Resistance Normally-Off Double-Channel MOS-HEMT, "*2016 Compound Semiconductor Week (CSW 2016)*, Toyama, Japan, June 26-30, 2016. - S.
Yang, Y. Lu, S. Liu, H. Wang, C. Liu, and
**K. J. Chen**, "Impact of*V*_{TH}Shift on*R*_{ON}in E/D-Mode GaN-on-Si Power Transistors: Role of Dynamic Stress and Gate Overdrive, "*2016 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD'16)*, Prague, Czech Republic, Jun. 12-16, 2016. - X.
Tang, B. Li, H. Wang, J. Wei, G. Tang, Z. Zhang, and
**K. J. Chen**, "Impact of Integrated Photonic-Ohmic Drain on Static and Dynamic Characteristics of GaN-on-Si Heterojunction Power Transistors, "*2016 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD'16)*, Prague, Czech Republic, Jun. 12-16, 2016. - J. Wei,
H. Jiang, Q. Jiang, and
**K. J. Chen**, "Proposal of a Novel GaN/SiC Hybrid FET (HyFET) with Enhanced Performance for High-Voltage Switching Applications, "*2016 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD'16)*, Prague, Czech Republic, Jun. 12-16, 2016. - S. Yang, L. Lei, K. Yu, A.
Zhang, and
**K. J. Chen**, " Comparison of SiN_{x }and AlN Passivations for AlGaN/GaN HEMTs, "*229*^{th}*ECS Meeting*, San Diego, USA, May 29-Jun. 2, 2016.

·
M.
Hua, Y. Lu, S. Liu, C. Liu, K. Fu, Y. Cai, B. Zhang, and **K. J. Chen**, "Compatibility of
AlN/SiN_{x} Passivation with High-Temperature
Process," *CS
MANTECH Conference*, Hyatt
Regency Miami, Florida, USA, May 16-19, 2016.

**2015:**

- X.
Tang, B. Li, Y. Lu, H. Wang, C. Liu, J. Wei, and
**K. J. Chen**, "III-Nitride Transistors with Photonic-Ohmic Drain for Enhanced Dynamic Performances, "*2015 Int. Electron Device Meeting (IEDM 2015)*, Washington, DC, USA, Dec. 7-9, 2015. - J.
Wei, S. Liu, B. Li, X. Tang, Y. Lu, C. Liu, M. Hua, Z.
Zhang, G. Tang, and
**K. J. Chen**, "Enhancement-mode GaN Double-Channel MOS-HEMT with Low On-resistance and Robust Gate Recess, "*2015 Int. Electron Device Meeting (IEDM 2015*), Washington, DC, USA, Dec. 7-9, 2015. **(Invited)****K. J. Chen**, B. Li, X. Tang, and J. Wang, "Optoelectronic Devices on AlGaN/GaN HEMT Platform, "*11*, Beijing, China, Aug. 30- Sept. 4, 2015.^{th}Int. Conf. on Nitride Semiconductors (ICNS-11)- M.
Hua, C. Liu, S. Yang, S. Liu, K. Fu, Z. Dong, Y. Cai, B.
Zhang, and
**K. J. Chen**, "Gate Leakage and Time-Dependent Dielectric Breakdown Characteristics of LPCVD-SiN_{x}/AlGaN/GaN MIS-HEMTs, "*11*, Beijing, China, Aug. 30- Sept. 4, 2015.^{th}Int. Conf. on Nitride Semiconductors (ICNS-11) - X.
Tang, Q. Jiang, H. Wang, B. Li, and
**K. J. Chen**, "Suppressed Substrate-Coupled Cross-Talk under AC High-Voltage Switching on the AlGaN/GaN-on-Si Smart Power IC Platform, "*11*, Beijing, China, Aug. 30- Sept. 4, 2015.^{th}Int. Conf. on Nitride Semiconductors (ICNS-11) - S.
Yang, Z. Tang, Y. Lu, A. Zhang, and
**K. J. Chen**, "Differences between SiN_{x}and AlN Passivations for AlGaN/GaN HEMTs: A Tcad-Simulation Based Study, "*11*, Beijing, China, Aug. 30- Sept. 4, 2015.^{th}Int. Conf. on Nitride Semiconductors (ICNS-11) - S.
Liu, S. Yang, C. Liu, Y. Lu and
**K. J. Chen**, "High-Performance Gate-Recessed Normally-Off GaN MIS-HEMTs with Thin Barrier Layer,"*11*, Beijing, China, Aug. 30- Sept. 4, 2015.^{th}Int. Conf. on Nitride Semiconductors (ICNS-11) - H.
Wang, C. Liu, Q. Jiang, Z. Tang, and
**K. J. Chen**, "Hard Switching Characteristics of AlN-Passivated AlGaN/GaN on silicon MIS-HEMTs,"*11*, Beijing, China, Aug. 30- Sept. 4, 2015.^{th}Int. Conf. on Nitride Semiconductors (ICNS-11) - C.
Liu, J. Wei, S. Liu, H. Wang, Z. Tang, S. Yang and
**K. J. Chen**, "Improved High-Voltage Performance of Normally-Off GaN MIS-HEMTs Using Fluorine implanted Enhanced Back Barrier, "*11*, Beijing, China, Aug. 30- Sept. 4, 2015.^{th }Int. Conf. on Nitride Semiconductors (ICNS-11) - X.
Tang, B. Li, Y. Lu, and
**K. J. Chen**, "On-Chip Addressable Schottky-on-Heterojunction Light-Emitting Diode Arrays on AlGaN/GaN-On-Si Platform, "*11*, Beijing, China, Aug. 30- Sept. 4, 2015.^{th }Int. Conf. on Nitride Semiconductors (ICNS-11) - S. Lin,
M. Wang, B. Xie, C. P. Wen, Min Yu, J. Wang, Y. Hao, W.
Wu, B. Shen, and
**K. J. Chen**, " Reduction of the Current Collapse in GaN High Electron Mobility Transistors by a Novel Surface Treatment,"*11*, Beijing, China, Aug. 30- Sept. 4, 2015.^{th }Int. Conf. on Nitride Semiconductors (ICNS-11) - L.
Yuan, X. Xiao, L. Tang, H. Li, Y. Jiang,
**K. J. Chen**and A. Yen, " First Demonstration of 0.27-Ω 600-V/10-A GaN-on-Si Power MIS-HEMTs in a 200-mm Hybrid CMOS-/Au-Compatible Process Line,"*11*, Beijing, China, Aug. 30- Sept. 4, 2015.^{th}Int. Conf. on Nitride Semiconductors (ICNS-11) **(Invited)**S. Yang, S. Liu, C. Liu, Y. Lu, and**K. J. Chen**, " Nitridation interfacial-layer technology for enhanced stability in GaN-based power devices, "*2015 IEEE International Symposium on Radio-Frequency Integration Technology(RFIT 2015)*, Sendai, Japan, Aug. 26-28, 2015.**(Keynote speach)****K. J. Chen,**"Technology Challenges of GaN Heterojunction Power Devices,"*The 7th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2015)*, Seoul, Korea, May 17-20, 2015.- X.
Tang, B. Li, and
**K. J. Chen**, "Accelerated Electron De-trapping in AlGaN/GaN-on-Si Power HEMTs using Schottky-on-Heterojunction Light Emitting Devices, "*2015 Compound Semiconductor Week (CSW 2015)*, University of California Santa Barbara, CA, USA, June 28-July 2, 2015. - C. Liu, H.
Wang, S. Yang, Y. Lu, S. Liu, Z. Tang, Q. Jiang, and
**K. J. Chen**, "Improved Thermal Stabilities in Normally-off GaN MIS-HEMTs, "*CS MANTECH Conference*, Scottsdale, Arizona, USA, May 18-21, 2015. - C. Liu, H.
Wang, S. Yang, Y. Lu, S. Liu, Z. Tang, Q. Jiang, S. Huang,
and
**K. J. Chen**, "Normally-off GaN MIS-HEMT with Improved Thermal Stability in DC and Dynamic Performance, "*2015 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD'15)*, Hong Kong, China, May 10-14, 2015. - M. Hua, C.
Liu, S. Yang, S. Liu, Y. Lu, K. Fu, Z. Dong, Y. Cai, B.
Zhang, and
**K. J. Chen**, "650-V GaN-Based MIS-HEMTs Using LPCVD-SiN_{x}as Passivation and Gate Dielectric, "*2015 Int. Symp. On Power Semiconductor Devices and ICs**(ISPSD'15)*, Hong Kong, China, May 10-14, 2015. - X. Tang, B.
Li, and
**K. J. Chen**, "On-chip Optical Pumping of Deep Traps in AlGaN/GaN-on-Si Power HEMTs,"*2015 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD'15)*, Hong Kong, China, May 10-14, 2015.

**2014:**

- S. Yang, S. Liu,
C.
Liu, Z.
Tang, Y.
Lu, and
**K. J.****Chen**, "Thermally Induced Threshold Voltage Instability of III-Nitride MIS-HEMTs and MOSC-HEMTs : Underlying Mechanisms and Optimization Schemes,"*2014 Int. Electron Device Meeting (IEDM 2014)*, San Francisco, CA, USA, Dec. 15-17, 2014. - B.
Li, X. Tang, Q. Jiang, Y. Lu, H. Wang, J. Wang, and
**K. J.****Chen**, "Schottky-on-Heterojunction Optoelectronic Functional Devices Realized on AlGaN / GaN-on-Si Platform,"*2014 Int. Electron Device Meeting (IEDM 2014)*, San Francisco, CA, USA, Dec. 15-17, 2014. - S.
Huang, Q. Jiang, K. Wei, G. Liu, J. Zhang, X. Wang, Y.
Zheng, B. Sun, C. Zhao, H. Liu, Z. Jin, X. Liu, H. Wang,
S. Liu, Y. Lu, C. Liu, S. Yang, Z. Tang, J. Zhang, Y. Hao,
and
**K. J. Chen**, "High-Temperature Low-Damage Gate Recess Technique and Ozone-Assisted ALD-grown Al_{2}O_{3}Gate Dielectric for High-Performance Normally-Off GaN MIS-HEMTs, "*2014 Int. Electron Device Meeting (IEDM 2014)*, San Francisco, CA, USA, Dec. 15-17, 2014. **(Invited)****K. J. Chen**, S. Yang, Z. Tang, and S. Huang, "Dielectric/III-N interfaces with nitridation interfacial-layer for GaN power electronics,"*45th IEEE Semiconductor Interface Specialists Conference (SISC),*San Diego, USA, Dec. 10-13, 2014.- S. Yang,
and
**K. J. Chen**, "Nitridation Interfacial-Layer Technology: Enabling Low Interface Trap Density and High Stability in III-Nitride MIS-HEMTs,"*12th International Conferences on Solid-State and Integrated Circuit Technology (ICSICT2014*), Guilin, China, Oct. 28-31, 2014. **(Invited)****K. J. Chen**, S. Yang, Z. Tang, S. Huang, Y. Lu, Q. Jiang, S. Liu, C. Liu, and B. Li, "Surface Nitridation for Improved Dielectric/III−Nitride Interfaces in GaN MIS−HEMTs,"*8th International Workshop on Nitride Semiconductors (IWN 2014),*Wrocław, Poland, August 24-29, 2014.- S. Liu, S.
Yang, Z. Tang, Q. Jiang, C. Liu, M. Wang, and
**K. J. Chen**, "Interface Characterization of Normally−Off Al_{2}O_{3}/AlN/GaN MOS−Channel− HEMTs with an AlN Interfacial Layer,"*8th International Workshop on Nitride Semiconductors (IWN 2014),*Wrocław, Poland, August 24-29, 2014. - Y. Lu, B.
Li, X. Tang, Q. Jiang, S. Yang, Z. Tang, and
**K. J. Chen**, "Investigation of Gate Degradation in Al_{2}O_{3}−AlGaN/GaN MIS−HEMTs using Transparent Gate Electrode,"*8th International Workshop on Nitride Semiconductors (IWN 2014),*Wrocław, Poland, August 24-29, 2014. - H. Wang, A. M. H. Kwan, Q. Jiang, and
**K. J. Chen**, "A GaN Pulse Width Modulation Integrated Circuit,"*2014 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD'14)*, Waikoloa, Hawaii, USA, June 15-19, 2014. - S. Liu, S.
Yang, Z. Tang, Q. Jiang, C. Liu, M. Wang, and
**K. J. Chen**, "Performance Enhancement of Normally-Off Al_{2}O_{3}/AlN/GaN MOS-Channel-HEMTs with an ALD- Grown AlN Interfacial Layer,"*2014 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD'14)*, Waikoloa, Hawaii, USA, June 15-19, 2014. - M. Wang, Y.
Wang, C. Zhang, C. P. Wen, J. Wang, Y. Hao, W. Wu, B. Shen,
and
**K. J. Chen**, "Normally-Off Hybrid Al_{2}O_{3}/GaN MOSFET on Silicon Substrate Based on Wet-Etching,"*2014 International Symposium on Power Semiconductor Devices and ICs (ISPSD**'**14)*, Waikoloa, Hawaii, USA, June 15-June19, 2014. - Z. Tang, S.
Huang, and
**K. J. Chen**, "Stability and Temperature Dependence of Dynamic R_{ON}in AlN-Passivated AlGaN/GaN HEMT on Si Substrate,"*CS MANTECH Conference*, Denver, Colorado, USA, May 19-22, 2014.**(Best student paper award)** - A. Zhang,
L. Zhang, Z. Tang, X. Cheng, Y. Wang,
**K. J. Chen**, and M. Chan, "Analytical Modeling for AlGaN/GaN HEMTs,"*The 11th International Workshop on Compact**Modeling (IWCM 2014)*, Singapore, Jan. 23, 2014.

**2013:**

- S. Yang, Z. Tang, K. Wong, Y. Lin, S. Huang, and
**K. J. Chen**, "Mapping of interface traps in high-performance Al_{2}O_{3}/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques,"*2013 Int. Electron Device Meeting (IEDM 2013),*Washington, DC, USA, Dec. 9-11, 2013. - Z. Tang, Q.
Jiang, S. Huang, Y. Lu, S. Yang, C. Liu, X. Tang, S. Liu, B.
Li, and
**K. J. Chen**, "Monolithically Integrated 600-V E/D-Mode SiNx/AlGaN/GaN MIS-HEMTs and Their Applications in Low-Standby-Power Start-Up Circuit for Switched-Mode Power Supplies,"*2013 Int. Electron Device Meeting (IEDM 2013),*Washington, DC, USA, Dec. 9-11, 2013. **(Invited talk) K. J. Chen**, "Toward GaN-based Power Integrated Circuits,"*The 2*, Nov. 12-15, 2013, ICC Jeju, Korea.^{nd}Int. Conf. on Advanced Electromaterials (ICAE 2013)- C. Liu, S. Liu, S. Huang, B. Li, and
**K. J. Chen**, "AlN/GaN heterostructure TFTs with the polarized AlN barrier grown by 300^{o}C plasma enhanced atomic layer epitaxy,"*10*, Sep. 2-5, 2013, Hakodate, Japan.^{th}Topical Workshop on Heterostructure Microelectronics (TWHM-10) **(Invited talk) K. J. Chen**, Technologies for III-N Heterogeneous Mixed-signal Electronics,"*10*, Washington, DC, USA, Aug. 25-30, 2013.^{th}Int. Conf. on Nitride Semiconductors (ICNS-10)- B. Li,
**K. J. Chen**, Q. Jiang, S. Liu, and C. Liu "Degradation of OFF-state leakage current in AlGaN/GaN HEMTs induced by an ON-state gate overdrive,"*10*, Washington, DC, USA, Aug. 25-30, 2013.^{th}Int. Conf. on Nitride Semiconductors (ICNS-10)**(Outstanding poster award)** - S. Yang, J. Lu, S. Huang, C. Zhou, B. Huang, and
**K. J. Chen**, "GaN Buffer Traps in GaN-on-Si Structure Studied by Thermally Stimulated Current and Back-Gating Measurements,"*10*, Washington, DC, USA, Aug. 25-30, 2013.^{th}Int. Conf. on Nitride Semiconductors (ICNS-10) - S. Huang,
K. Wei, X. Liu, G. Liu, B. Shen, and
**K. J. Chen**, "Improved High-Temperature Stability of 2DEG Channel in AlGaN/GaN Heterostructures by PEALD-grown AlN Thin Film Passivation,"*10*, Washington, DC, USA, Aug. 25-30, 2013.^{th}Int. Conf. on Nitride Semiconductors (ICNS-10) - S. Yang, Q. Jiang, B. Li, Z. Tang and
**K. J. Chen**, "GaN-to-Si Vertical Conduction Mechanisms in AlGaNjGaN-on-Si Lateral Heterojunction FET Structures,"*10*, Washington, DC, USA, Aug. 25-30, 2013.^{th}Int. Conf. on Nitride Semiconductors (ICNS-10) - C. Liu, S.
Liu, S. Huang, B. Li, and
**K. J. Chen**, "AlN/GaN heteostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film,"*10*, Washington, DC, USA, Aug. 25-30, 2013.^{th}Int. Conf. on Nitride Semiconductors (ICNS-10) - Y. Wang, M. Wang, B. Xie, J. Wang, Y. Hao, W. Wu, B.
Shen, and
**K. J. Chen**, "High Performance Normally-Off AlGaN/GaN MOSFET with Al_{2}O_{3}High-k Dielectric Layer Using a Low Damage Recess Technique,"*10*, Washington, DC, USA, Aug. 25-30, 2013.^{th}Int. Conf. on Nitride Semiconductors (ICNS-10) - Q.
Jiang, C. Liu, Y. Lu, and
**K. J. Chen**, "High-voltage enhancement/depletion-mode AlGaN/GaN HEMTs on modified SOI substrates,"*2013 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD**'**13)*, May 26-30, 2013, Kanazawa, Japan.__(Charitat Award: for the best Young Researcher)__ - Z.
Tang, S. Huang, Q. Jiang, S. Liu, C. Liu, and
**K. J. Chen**, "600 V high-performance AlGaN/GaN HEMTs with AlN/SiNx passivation,"*2013 Compound Semiconductor Manufacturing Technology Conference CS MANTECH*, Boston, USA, Apr. 23-26, 2012.**(Best student paper award)** - Z. Tang, S. Huang, Q.
Jiang, S Liu, C. Liu, and
**K. J. Chen**, "600V 1.3mΩ∙cm^{2}Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiN_{x}Passivation,"*2013 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD**'**13)*, May 26-30, 2013, Kanazawa, Japan. - Q. Zhou, W. Chen, S. Liu, B. Zhang, Z. Feng, S. Cai,
and
**K. J. Chen**, "High Breakdown Voltage InAlN/AlN/GaN HEMTs Achieved by Schottky-Source Technology,"*2013 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD**'**13)*, May 26-30, 2013, Kanazawa, Japan. **(Invited talk) K. J. Chen**, "Device technology for GaN mixed-signal integrated circuits," 5^{th}Int. Symp. On Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), Jan. 28-Feb. 1, 2013, Nagoya University, Japan.

**2012:**

- A. M. H. Kwan, X. Liu, and
**K. J. Chen**, "Integrated gate-protected HEMTs and mixed-signal functional blocks for GaN smart power ICs," 2012 Int. Electron Device Meeting (IEDM2012), San Francisco, USA, Dec. 10-12, 2012. **(Invited talk) K. J. Chen**, L. Yuan, and H. Chen, "AlGaN/GaN metal-2DEG tunnel junction FETs with normally-off operation, high on-state current and low off-state leakage," 2012 IEEE Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT2012), Xi'an, CHINA, Oct. 29- Nov. 1, 2012.- A. M. H. Kwan, Y. Guan, X. Liu, and
**K. J. Chen**, "Over-temperature protection integrated circuit for GaN smart power ICs,"*2012 Int. Workshop on Nitride Semiconductors (IWN2012)*, Oct. 14-19, 2012, Sapporo, Japan. **(Invited talk)**S. Yang, S. Huang, Q. Zhao, and**K. J. Chen**, "Enhancement-mode AlGaN/GaN MISHEMTs with fluorinated high-k LaLuO_{3}gate dielectric,"*2012 Int. Workshop on Nitride Semiconductors (IWN2012)*, Oct. 14-19, 2012, Sapporo, Japan.- S. Huang, Q. Jiang, S. Yang, Z. Tang, and
**K. J. Chen**, "Mechanism of PEALD-grown AlN passivation of AlGaN/GaN HEMTs,"*2012 Int. Workshop on Nitride Semiconductors (IWN2012)*, Oct. 14-19, 2012, Sapporo, Japan. - X. Liu,
C. Zhan, K. W. Chan, W. Liu, L. S. Tan,
**K. J. Chen**and Y.-C. Yeo, "AlGaN/GaN-on-Sapphire MOS-HEMTs with breakdown voltage of 1400 V and on-state resistance of 22 mW∙cm^{2}using a CMOS-compatible gold-free process,"*2012 International Conference on Solid State Device and Materials (SSDM2012)*, Kyoto, Japan, Sep. 25-27, 2012. - C.
Zhou, Q. Jiang, S. Huang, and
**K. J. Chen**, "Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si structure,"*2012 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD'12)*, Bruges, Belgium. June 4-7, 2012. - S.
Huang, Q. Jiang, S. Yang, C. Zhou, and
**K. J. Chen**, "ALD-grown ultrathin AlN film for passivation of AlGaN/GaN HEMTs,"*2012 CS MANTECH,*Boston, USA, Apr. 23-26, 2012. - X. Liu, C. Zhan, K.
W. Chan, W. Liu, L. S. Tan,
**K****. J.****Chen**and Y.-C. Yeo, "AlGaN/GaN-on-Silicon MOS-HEMTs with Breakdown Voltage of 800 V and On-State Resistance of 3 mΩ.cm^{2}using a CMOS-Compatible Gold-Free Process,"*2012 Int. Symp. on VLSI Technology, Systems, and Applications (VLSI-TSA),*Hsinchu, Taiwan, Apr. 23-25, 2012. **(Invited)****K. J. Chen**, "Fluorine Plasma Ion Implantation: a GaN Normally-off HEMT Technology"*4*^{th}*Int. Symp. On Advanced Plasma Science and its Application for Nitrides and Nanomaterials (ISPlasma2012)*, Aichi, Japan, Mar. 4-8, 2012.

**2011:**

**(Invited)****K. J. Chen,**L. Yuan, M.J. Wang*, H. Chen, S. Huang*, C. Zhou, Q. Zhou, B.K. Li, J. N. Wang, "Physics of Fluorine Plasma Ion Implantation for GaN Normally-off HEMT Technology",*2011 Int. Electron Device Meeting (IEDM)*, Washington D. C., USA, Dec. 4-7, 2011.- Q. Zhou, S. Huang*, H. Chen, C. Zhou,
Z. Feng, S. Cai,
**K. J. Chen**, "Schottky Source/Drain Al_{2}O_{3}/InAlN/GaN MIS-HEMT with Steep Sub-threshold Swing and High ON/OFF Current Ratio",*2011 Int. Electron Device Meeting (IEDM)*, Washington D. C., USA, Dec. 4-7, 2011. - Qi Zhou, Hongwei Chen, Chunhua Zhou, Z.H. Feng, S.J. Cai
and
**K. J. Chen***, "InAlN/AlN/GaN Schottky source/drain MIS-HEMT with high breakdown voltage,"**2011 Int. Conf. on Solid-State Devices and Materials (SSDM2011)*, Nagoya, Japan, Sep. 28-30, 2011. - S. Huang, S. Yang, J.
Roberts, and
**K. J. Chen**, "Characterization of Vth-instability in Al_{2}O_{3}/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement,"*9*, Glasgow, UK, July 10-15, 2011^{th}Int. Conf. on Nitride Semiconductors (ICNS-9) - H. Chen, L. Yuan, Q. Zhou, C. Zhou, and
**K. J. Chen,**"Normally-off AlGaN/GaN Power Tunnel-Junction FETs,"*9*, Glasgow, UK, July 10-15, 2011.^{th}Int. Conf. on Nitride Semiconductors (ICNS-9) - Q. Zhou, H. Chen, C. Zhou, Z. Feng,
S. J. Cai, and
**K. J. Chen**, "Observation Observation of Trap-Assisted Steep Sub-threshold Swing in Schottky Source/Drain Al_{2}O_{3}/InAlN/GaN MISHEMT,"*69*, Santa Barbara, CA, USA, June 20-22, 2011.^{th}Device Research Conference (DRC) - J. Fu, L.
Yobas, and
**K.J. Chen**, "Stealth electrode dielectrophoresis: Microsphere manipulation by patterned 2-Dimensional Electron Gas (2-DEG) in AlGaN/GaN heterostructures,"*The 3rd International Symposium on Microchemistry and Microsystems (ISMM)*, Seoul, Korea, June 2-4, 2011, Abstract: F3-056. - L. Yuan, H. Chen, Q. Zhou, C. Zhou, and
**K. J. Chen**, "A novel normally-off GaN power tunnel junction FET,"*The 23*San Diego, USA, May 23-26, 2011.^{rd}Int. Symp. on Power Semiconductor Devices and ICs (ISPSD'11), - J. N. Lv,
Z. C. Yang, G. Z. Yan, Y. Cai, B. S. Zhang, and
**K. J. Chen**, "Characterization of GaN cantilevers fabricated with GaN-on-Si platform,"*IEEE MEMS 2011*. Jan. 23-27, 2011, Cancun, Mexico. **(Invited)****K. J. Chen**, "Role of Fluorine Plasma Ion Implantation in GaN Electron Devices,"*SPIE Photonics West Conference, OPTO,*San Francisco, USA, Jan. 22-27, 2011.

**2010:**

- C. Ma, H. Chen, C. Zhou, S. Huang, L. Yuan, J.
Roberts, and
**K. J. Chen**, "Reliability of Enhancement-mode AlGaN/GaN HEMTs under ON-state Gate Overdrive,"*2010 Int. Electron Device Meeting (IEDM)*, San Francisco, USA, Dec. 4-7, 2010. **(Invited)****K. J. Chen**and C. Zhou "GaN Smart Discrete Power Devices,"*The 10*, Shanghai, China, Nov. 1-4, 2010.^{th}Int. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT08)**(Invited)****K. J. Chen**, "GaN Smart Power IC Technologies,"*IEEE University Government Industry Micro/Nano Symposium (UGIM 2010)*, Purdue University, West Lafayette, IN, USA, June 28-July 1, 2010.**(Invited**)**K. J. Chen**, "Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT Technology,"*The 37*, Takamatsu Symbol Tower, Kagawa, Japan, May 31-June 4, 2010.^{th}Int. Symp. On Compound Semiconductors (ISCS2010)- A. M. H. Kwan, K. -Y. Wong, X. Liu, and
**K. J. Chen**, "High-Gain and High-Bandwidth AlGaN/GaN HEMT Comparator," 2010 Int. Conf. on Solid-State Devices and Materials (SSDM2010), Tokyo, Japan, Sep. 22-24, 2010. - J. Fu and
**K. J. Chen**, "Microspheres manipulation and sensing system by AlGaN/GaN 2DEG,"*Int. Workshop on Nitride Semiconductors (IWN2010)*, Tampa, Florida, USA, Sep. 19-24, 2010. (oral presentation) - S. Huang, H. Chen, and
**K. J. Chen**, "Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of AlGaN/GaN heterostructures,"*Int. Workshop on Nitride Semiconductors (IWN2010)*, Tampa, Florida, USA, Sep. 19-24, 2010. (oral presentation) - B. K. Li,
M. J. Wang*,
**K. J. Chen**, J. N. Wang, "Electroluminenscence from forward biased Ni/Au-AlGaN/GaN Schottky diodes,"*The 30*, Seoul, Korea, July 25-30, 2010. (oral presentation)^{th}Int. Conf. on the Physics of Semiconductors (ICPS 2010) - H. Chen, M. Wang*,
and
**K. J. Chen**, "Self-Aligned Enhancement-mode AlGaN/GaN HEMTs Using 25 keV Fluorine Ion Implantation,"*The 68*, University of Notre Dame, South Bend, Indiana, USA, June 21-23, 2010.^{th}Device Research Conference (DRC10) - C. Zhou, W. J.
Chen*, E. L. Piner, and
**K. J. Chen**, "Self-Protected GaN Power Devices with Reverse Drain Blocking and Forward Current Limiting Capabilities,"*The 22*, Hiroshima, Japan, June 6-10, 2010^{nd}Int. Symp. on Power Semiconductor Devices and ICs (ISPSD'10)__(Charitat Award: for the best Young Researcher)__ - C. Zhou, W. J.
Chen*, E. L. Piner, and
**K. J. Chen**, "AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier with Punch-through Breakdown Immunity and Low On-Resistance,"*2010 Int. Conf. on Compound Semiconductor Manufacturing Technology (CS MANTECH)*, Portland, Oregon, USA, May 7-10, 2010. - H. Chen, M. Wang*,
and
**K. J. Chen**, "Enhancement-mode AlGaN/GaN HEMTs Fabricated by Standard Fluorine Ion Implantation,"*2010 Int. Conf. on Compound Semiconductor Manufacturing Technology (CS MANTECH)*, Portland, Oregon, USA, May 7-10, 2010. - J.
N. Lv, Z.C. Yang, G.Z. Yan, Y. Cai, B.S. Zhang and
**K.J. Chen**, "Residual Stress Characterization of GaN Microstructures Using Bent-Beam Strain Sensors,"*The 5th Annual IEEE Int. Conf. on Nano/Micro Engineering and Molecular Systems (IEEE-NEMS 2010)*, Xiamen, China, Jan. 20-23, 2010.

**2009:**

**(Invited)****K. J. Chen**, K. -Y. Wong, W. J. Chen, C. Zhou, and X. Liu, "Device Technology Platform for GaN Smart Power ICs,"*2009 Int. Electron Device and Material Symposium (IEDMS2009)*, Taoyuan, Taiwan, Nov. 18-21, 2009.- B. K. Li, M. J. Wang,
**K. J. Chen***, and*J. N. Wang*,*"Electronluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: evidence of Femi level depinning at Ni/AlGaN interface,"*8th Int. Conf. on Nitride Semiconductors (ICNS-8),*Jeju, Korea, Oct. 18-23, 2009. - K. -Y. Wong, W. J. Chen, X. Liu, C. Zhou, and
**K. J. Chen**, "GaN Smart Power IC Technology,"*8th Int. Conf. on Nitride Semiconductors (ICNS-8),*Jeju, Korea, Oct. 18-23, 2009. - M. J. Wang,
**K. J. Chen**, C. Cheng, C. D. Beling, and S. Fung, "Modulation of Polarization Induced Electric Field by Fluorine Ions in AlGaN/GaN Heterostructures Revealed by Positron Annihilation Spectroscopy,"*8th Int. Conf. on Nitride Semiconductors (ICNS-8),*Jeju, Korea, Oct. 18-23, 2009. - K. -Y. Wong, W. J. Chen, and
**K. J. Chen**, "GaN Zero-Bias RF Mixer Using a Lateral Field-Effect Rectifier,"*2009 Int. Conf. on Solid-State Devices and Materials (SSDM2009)*,Sendai, Miyagi Japan, Oct. 7-9, 2009. - Q. Zhou, K. -Y. Wong, W. J. Chen, and
**K. J. Chen**, "Zero-Bias Microwave Detectors Using AlGaN/GaN HEMT-Compatible Lateral Field-Effect Rectifier (L-FER),"*8th Topical Workshop on Heterostructure Microelectronics (TWHM2009)*, Mielparque-Nagano, Nagano, Japan, Aug. 25-28, 2009. - K. -Y. Wong, W. J. Chen, and
**K. J. Chen**, "Integrated Voltage Reference and Comparator Circuits for GaN Smart Power Chip Technology,"*2009 Int. Symp.. on Power Semiconductor Devices and ICs (ISPSD'09)*, Barcelona, Spain, June 14-17, 2009.__(Charitat Award: for the best Young Researcher)__ - K. -Y. Wong, W. J. Chen, and
**K. J. Chen**, "Wide Bandgap GaN Smart Power Chip Technology,"*2009 Int. Conf. on Compound Semiconductor Manufacturing Technology (CS Matech'09)*, Tampa, Florida, USA, May 18-21, 2009.

**2008:**

- W. Chen, K. -Y. Wong, and
**K. J. Chen**, "Monolithic Integration of Lateral Field Effect Rectifier with Normally-off HEMT for GaN-on-Si Switch-mode Power Supply Converters,"*2008 Int. Electron Device Meeting (IEDM08)*, San Francisco, USA, Dec. 15-17, 2008. - M. Wang and K
**. J. Chen**, "Source Injection Induced Off-State Breakdown and Its Improvement by Enhanced Back Barrier with Fluorine Ion Implantation in AlGaN/GaN HEMTs,"*2008 Int. Electron Device Meeting (IEDM08)*, San Francisco, USA, Dec. 15-17, 2008. - L. Yuan, M. Wang, and
**K. J. Chen**, "Atomistic Modeling of Fluorine Implantation and Diffusion in III-Nitride Semiconductors,"*2008 Int. Electron Device Meeting (IEDM08)*, San Francisco, USA, Dec. 15-17, 2008. **(Invited)****K. J. Chen**, "Threshold Voltage Control in AlGaN/GaN HEMTs by Fluorine Plasma Ion Implantation: From Normally-ON to Normally-OFF," 15^{th}National Conference on Compound Semiconductor: Materials, Microwave and Optoelectronic Devices, Guangzhou, China, Dec. 1-2, 2008.**(Invited)****K. J. Chen**, "Fluorine Plasma Ion Implantation (Treatment) Technology: a New Dimension in GaN Electronic Device Processing,"*The 9*, Beijing, China, Oct. 20-23, 2008.^{th}Int. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT08)- W. Chen, K. -Y. Wong, W.
Huang, and
**K. J. Chen**, "High Temperature Operation of Normally-off AlGaN/GaN Power HEMTs using CF4 Plasma Treatment,"*The 9*, Beijing, China, Oct. 20-23, 2008.^{th}Int. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT08) - L. Yuan, M. Wang, and
**K. J. Chen**, "Molecular Dynamics Simulation Study on Fluorine Plasma Ion Implantation in AlGaN/GaN Heterostructures,"*The 9*, Beijing, China, Oct. 20-23, 2008.^{th}Int. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT08) - W. Chen, K. -Y. Wong
*,*and**K. J. Chen**, "HEMT-Compatible Lateral Field Effect Rectifier Using CF4 Plasma Treatment,"*2008 Int. Workshop on Nitride Semiconductors (IWN2008)*, Montreux, Switzerland, Oct. 6-10, 2008. - M. Wang, L. Yuan, F. Xu, B.
Shen, and
**K. J. Chen,**"Study of Diffusion and Thermal Stability of Fluorine Ions in GaN by Time-of-Flight Secondary Ion Mass Spectroscopy,"*2008 Int. Workshop on Nitride Semiconductors (IWN2008)*, Montreux, Switzerland, Oct. 6-10, 2008. - L. Yuan, M. Wang
*,*and**K. J. Chen**, "On the Stability of Fluorine Ions in AlGaN/GaN Heterostructures: a Molecular Dynamics Simulation Study,"*2008 Int. Workshop on Nitride Semiconductors (IWN2008)*, Montreux, Switzerland, Oct. 6-10, 2008. - K. -Y. Wong, W. Chen, and
**K. J. Chen,**"High Temperature Performance of AlGaN/GaN HEMT-Compatible Lateral Field Effect Rectifier,"*2008 Int. Conf. Solid-State Devices and Materials (SSDM08)*, Tsukuba, Japan, Sep. 23-26, 2008. - L. Yuan, M. Wang,
**K. J. Chen**, "On the Stability of Fluorine Ions in AlGaN/GaN System: a Theoretical Study,"*2008 Int. Conf. Solid-State Devices and Materials (SSDM08)*, Tsukuba, Japan, Sep. 23-26, 2008. - W. Chen, W. Huang, K. Y. Wong, and
**K. J. Chen**, "High-Performance AlGaN/GaN HEMT-Compatible Lateral Field-Effect Rectifiers,"*66th Device Research Conference (DRC),*Santa Barbara, California, USA, June 22-25, 2008. - J. Lv, Z.
Yang, and
**K. J. Chen**, "Fabrication of Suspending GaN Microstructures with Combinations of Anisotropic and Isotropic Dry Etching Techniques,"*Proc. Of ASME Nano08*, Clear Water Bay, Hong Kong, Kowloon, Hong Kong, June 3-5, 2008. **(Invited)****K. J. Chen**, "Core Technologies for III-Nitride Integrated Microsensors,"*2008 HKUST Nanotechnology Workshop*, HKUST, Jan 23-25, 2008.

**2007:**

- C. Yi, R. Wang, W. Huang
*,*T. C. -W. Tang, K. M. Lau, and**K. J. Chen,**"Reliability of Enhancement-mode AlGaN/GaN HEMTs Fabricated by Fluorine Plasma Treatment,"*2007 International Electron Device Meeting (IEDM07)*, Washington D. C., USA, Dec. 10-12, 2007. - B. K. Li,
**K. J. Chen**, K. M. Lau, W. Ge, and J. N. Wang, "Characterization of Fluorine-Plasma Induced Deep Centers in AlGaN/GaN Heterostructures,"*7*, Sep. 16-21, 2007, Las Vegas, Nevada, USA.^{th}Int. Conf. Nitride Semiconductors (ICNS-7) - R. Wang, Y. C. Wu, W. C. -W. Tang, K. M. Lau, and
**K. J. Chen**, "Gain Improvement of Enhancement-mode AlGaN/GaN HEMT using Dual-gate Architectures,"*2007 Int. Conf. Solid-State Devices and Materials (SSDM07)*, Tsukuba, Japan, Sep. 18-21, 2007. - K. Y. Wong, W. C. -W.
Tang, K. M. Lau, and
**K. J. Chen**, "Two-dimensional Electron Gas (2DEG) IDT SAW Devices on AlGaN/GaN Heterostructures,"*IEEE-NANO 2007*, Hong Kong, Aug. 2-5, 2007. - C. Wang, Z. Yang, B. Zhang,
Y. Wang, H. Wang, K. M. Lau, and
**K. J. Chen**, "Fabrication of Vertical Position-Controlled GaN Nanowires on (111) Si Substrate,"*IEEE-NANO 2007*, Hong Kong, Aug. 2-5, 2007 - J. Liu, D. Song, Z. Cheng, W. C. -W
Tang, K. M. Lau, and
**K. J. Chen**, "Microwave Noise Characterization of Enhancement-mode AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs,"*IEEE 65th Device Research Conference*, South Bend, Indiana, USA, June 18-20, 2007, pp. 77-78. - D.
Song, J. Liu, Z. Cheng, W. C. -W.
Tang, K. M. Lau, and
**K. J. Chen**, "Normally-off AlGaN/GaN Low-Density-Drain HEMTs (LDD-HEMT) with Enhanced Breakdown Voltage and Suppressed Current Collapse,"*IEEE 19th Int. Symp. on Power Semiconductor Devices & ICs (ISPSD'07)*, Jeju, Korea, May 27-30, 2007, pp. 257-260. - J.
Zhang, H. Zhang,
**K. J. Chen,**S. G. Lu, and Z. Xu, "Microwave Performance Dependence of BST Thin Film Planar Interdigitated Varactors on Different Substrate,"*IEEE Int. Conf. on Nano/Micro Engineering and Molecular Systems (IEEE-NEMS 2007)*, Bangkok, Thailand, Jan. 16-19, 2007. - Z.
Yang, B. Zhang,
K. M. Lau, and
**K. J. Chen**, "Fabrication of Position-Controllable GaN Nanostructures,"*IEEE Int. Conf. on Nano/Micro Engineering and Molecular Systems (IEEE-NEMS 2007)*, Bangkok, Thailand, Jan. 16-19, 2007.

**2006:**

*R. N. Wang, Y. Cai, Z. Cheng,*C. W. Tang, K. M. Lau, and**K. J. Chen**. "A Planar Integration Process for E/D-mode AlGaN/GaN HEMT DCFL Integrated Circuits,"*2006 IEEE Compound Semiconductor IC Symposium*, San Antonio, USA, Nov. 12-15, 2006.- R.
N. Wang, Y. Cai, Z. Cheng, C.-W. Tang,
K. M. Lau, and
**K. J. Chen**, "Enhancement-Mode AlGaN/GaN Metal Insulator Semiconductor HFETs Using Fluoride-Based Plasma Treatment Technique"*Int. Workshop on Nitride Semiconductors (IWN2006)*, Kyoto, Japan, Oct. 22-27, 2006. - Z.
Yang, B. Zhang,
K. M. Lau, and
**K. J. Chen**, "SiN-Masked GaN-on-Patterned-Silicon (GPS) Technique for fabrication of suspended GaN microstructures."*The 8th Int. Conf. Solid-State and Integrated-Circuit Technology (ICSICT-2006)*, Shanghai, China, Oct. 23-26, 2006. - J.
W. Zhang, Wai Cheong Hon, Lydia L. W. Leung, and
**K. J. Chen**, "Fabrication of Edge-Suspended Microwave Passive Components using CMOS-Compatible Micromachining,"*The 8th Int. Conf. Solid-State and Integrated-Circuit Technology (ICSICT-2006)*, Shanghai, China, Oct. 23-26, 2006. - K.-Y.
Wong, W.-Y. Tam,
and
**K. J. Chen**, "Analysis of SAW Filter Fabricated on Anisotropic Substrate Using Finite-Difference Time-Domain Method,"*IEEE Ultrasonics Symposium,*Vancouver, Canada, Oct. 2-6, 2006. (oral presentation) - K.-Y.
Wong, W. C. W.
Tang, K. M. Lau, and
**K. J. Chen**, "Planar Integration of SAW Filter with HEMT on AlGaN/GaN Heterostructure Using Fluoride-based Plasma Treatment,"*IEEE Ultrasonics Symposium,*Vancouver, Canada, Oct. 2-6, 2006. (oral presentation). - Y.
Cai, Z. Q. Cheng, W. C. -W.
Tang, K. M. Lau, and
**K. J. Chen**, "GaN-based Direct-Coupled FET Logic (DCFL) Digital Circuits Operating at 375^{o}C,"*2006 Int. Conf. on Solid State Devices and Materials (SSDM 2006),*Yokohama, Japan, Sep. 12-15, 2006. - R.
Wang, Y. Cai, C. -W.
Tang, K. M. Lau, and
**K. J. Chen,**"Device Isolation by Plasma Treatment for Planar Integration of E/D-mode AlGaN/GaN HEMTs,"*2006 Int. Conf. on Solid State Devices and Materials (SSDM 2006),*Yokohama, Japan, Sep. 12-15, 2006.

- H. Zhang and
**K. J. Chen**, "A Microstrip Bandpass Filter with an Electronically Reconfigurable Transmission Zero,"*2006 European Microwave Conference (EUMW2006)*, Manchester, U. K., Sep. 10-15, 2006. **(Invited)****K. J. Chen**and K. M. Lau, "Core Technologies for III-Nitride Integrated Microsensors,"*6th**Emerging Information Technology Conference (EITC'06)*, Richardson, Texas, USA, Aug. 10-13, 2006.- L. L. W. Leung
**K. J. Chen**, "Compact On-Chip Three-Dimensional Electromagnetic Bandgap Structure,"*2006 IEEE International Microwave Symposium (IMS2006)*, San Francisco, USA, June 6-11, 2006. - C-W. Tang, L. Jiang, K. M. Lau, and
**K. J. Chen**, "MOCVD Grown Metamorphic InAlAs/InGaAs HEMTs on GaAs Substrates,"*2006 Int. Conf. Compound Semiconductor Manufacturing Technology (MANTECH'06)*, Vancouver, Canada, Apr. 24-27, 2006, pp. 243-245.

**2005:**

- Z
*. Yang, R. Wang, D. Wang,*B. Zhang.**K. J. Chen**, and K. M. Lau, "GaN on Patterned Silicon (GPS) Technique for GaN based Integrated Microsensors,"*2005 International Electron Device Meeting (IEDM05)*, Washington D. C., USA, Dec. 4-7, 2005. - Y. Cai, Z.
Cheng, C. W. Tang,
**K. J. Chen**, and K. M. Lau, "Monolithic Integration of Enhancement- and Depletion-mode AlGaN/GaN HEMTs for GaN Digital Integrated Circuits,"*2005 International Electron Device Meeting (IEDM05)*, Washington D. C., USA, Dec. 4-7, 2005. - Z. Cheng, Y.
Cai, J. Liu, Y. G. Zhou, K. M. Lau, and
**K. J. Chen**, "Monolithic Integrated C-band Low Noise Amplifier Using AlGaN/graded-AlGaN/GaN HEMTs,"*Proceeding of 2005 Asia-Pacific Microwave Conference (APMC2005)*, Suzhou, China, Dev. 4-7, 2005. - H. Zhang
**K. J. Chen**, "Compact Bandpass Filters Using Slow-Wave Coplanar Waveguide Tri-Section Stepped Impedance Resonators,"*Proceeding of 2005 Asia-Pacific Microwave Conference (APMC2005)*, Suzhou, China, Dev. 4-7, 2005. - H. Zhang, J. W.
Zhang, L. L. W. Leung, and
**K. J. Chen**, "Bandpass and Bandstop Filters Using CMOS-Compatible Micromachined Edge-Suspended Coplanar Waveguides,"*Proceeding of 2005 Asia-Pacific Microwave Conference (APMC2005)*, Suzhou, China, Dev. 4-7, 2005. - J. Liu, Y. G.
Zhou, J. Zhu,
**K. J. Chen**, and K. M. Lau, "AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch,"*6th Int. Conf. on Nitride Semiconductors,(ICNS-6)*, Bremen, Germany, Aug. 28-Sep. 2, 2005. - Z. Yang, R.
Wang, S. Jia, D. Wang, B. Zhang,
**K. J. Chen**, and K. M. Lau, "Fabrication of Suspended GaN Microstructures Using GaN on Patterned Silicon (GPS) Technique,"*6th Int. Conf. on Nitride Semiconductors,(ICNS-6)*, Bremen, Germany, Aug. 28-Sep. 2, 2005. - J. Zhu, J. Liu, Y. G. Zhou, Y. Cai,
**K. J. Chen**, and K. M. Lau, "Reduced Gate-bias dependence of 2DEG mobility in a Composite-Channel HEMT,"*6th Int. Conf. on Nitride Semiconductors,(ICNS-6)*, Bremen, Germany, Aug. 28-Sep. 2, 2005. - S. Jia, Y. Cai,
D. Wang
*,*B. Zhang,**K. J. Chen**, and K. M. Lau, "Enhancement-Mode AlGaN/GaN HEMTs on Silicon Substrate,"*6th Int. Conf. on Nitride Semiconductors,(ICNS-6)*, Bremen, Germany, Aug. 28-Sep. 2, 2005. - Z. Feng, S. J. Cai,
**K. J. Chen**, and K. M. Lau, "AlGaN/GaN HEMTs on Grooved Sapphire Substrate,"*6th Int. Conf. on Nitride Semiconductors,(ICNS-6)*, Bremen, Germany, Aug. 28-Sep. 2, 2005. - Y. Cai, Y. G.
Zhou,
**K. J. Chen**, and K. M. Lau, "Enhancement-mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage,"*6th Topical Workshop on Heterostructure Microelectronics, (TWHM2005)*, Awaji Island, Hyogo, Japan, Aug. 22-25, 2005. **(Invited)****K. J. Chen**, J. Liu, Y. G. Zhou, and K. M. Lau, "Channel Engineering of III-Nitride HEMTs for Enhanced Device Performance,"*2005 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD05)*, Seoul, Korea, June 27-29, 2005.- Y. Cai, Y. G. Zhou,
**K. J. Chen**, and K. M. Lau, "Threshold Voltage Control of AlGaN/GaN HEMTs by CF4 Plasma Treatment,"*2005 Electronic Material Conference (EMC2005)*, Santa Barbara, California, USA, June 22-24, 2005. - M. Chen, W. Zhou, J. Zhu, Y. Cai, W. C. K.
Tang,
**K. J. Chen**, and K. M. Lau, "Metamorphic InP/GaAsSb/InP HBTs on GaAs substrate by MOCVD,"*2005 Electronic Material Conference (EMC2005)*, Santa Barbara, California, USA, June 22-24, 2005. - Y. Cai, Y. G.
Zhou,
**K. J. Chen**, and K. M. Lau, "Self-Aligned Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-based Plasma Treatment,"*63rd Device Research Conference (DRC)*, Santa Barbara, California, USA, June 20-22, 2005. - Z. Yang, S.
Jia, R. Wang, D. Wang,
**K. J. Chen**, and K. M. Lau, "GaN on Patterned Silicon (GPS) Technique for Fabrication of GaN-based MEMS,"*13th Int. Conf. Solid-State Sensors, Actuators, and Microsystems (TRANSDUCERS'05)*, Seoul, Korea, June 5-9, 2005. - C. S. Chu, Y. G. Zhou,
**K. J. Chen**, and K. M. Lau, "A novel RF High-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure,"*2005 IEEE Radio-Frequency Integrated Circuit Symposium (RFIC2005)*, Long Beach, USA, June 12-14, 2005.

**2004:**

- J. Liu, Y. G.
Zhou, R. M. Chu, Y. Cai,
**K. J. Chen**, and K. M. Lau,"Al0.3Ga0.7N/Al0.05Ga0.95N/GaN Composite-Channel HEMTs with Enhanced Linearity,"*2004 International Electron Device Meeting (IEDM04)*, San Francisco, USA, Dec. 13-15, 2004. - S. Jia, K. K.
P. Tsui, X. P. Liao,
**K. J. Chen**, "Characterization and modeling of a step-gate-oxide MOSFET for RF power amplifiers,"*The 7th Int. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT2004)*, Beijing, China, Oct. 18-21, 2004. - J. -W. Zhang,
W. C. Hon, L. L. W. Leung, and
**K. J. Chen**, "Fabrication of edge-suspended microwave passive components using CMOS-compatible micromachining,"*The 7th Int. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT2004)*, Beijing, China, Oct. 18-21, 2004. - C. S. Chu, Y. G. Zhou,
*R. M. Chu,***K. J. Chen**, and K. M. Lau, "GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors,"*The 7th Int. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT2004)*, Beijing, China, Oct. 18-21, 2004. - M. Wong, N. Fok, N. Fan, K. W. Chan, and
**K. J. Chen**, "High-performance low-cost embedded inductors using thin array plastic packaging (TAPP) for RF/microwave applications, ,"*2004 European Microwave Conference (EuMW2004)*, Amsterdam, Netherland, Oct. 12-14, 2004. - L. L. W. Leung,
J. -W. Zhang, W. C. Hon,
**K. J. Chen**, "High-performance CMOS-compatible micromachined edge-suspended coplanar waveguides on low-resistivity silicon substrate,"*2004 European Microwave Conference (EuMW2004)*, Amsterdam, Netherland, Oct. 12-14, 2004. - J. -W. Zhang,
W. C. Hon, L. L. W. Leung, and
**K. J. Chen**, "High-performance edge-suspended spiral inductors and CPWs on CMOS-grade silicon substrates,"*2004 International Conference on Microwave and Millimeter Wave Technology(ICMMT2004)*, Beijing, China, Aug. 18-21, 2004. - Y. G. Zhou, R. M. Chu, J. Liu,
**K. J. Chen**, and K. M. Lau,"Gate Leakage in AlGaN/GaN HEMTs and its Suppression by Optimization of MOCVD Growth,"*2004 International Workshop on Nitride Semiconductors*, Pittsburgh, Pennsylvania, USA, July 19-23, 2004. - R. M. Chu, Y. G. Zhou, J. Liu,
**K. J. Chen**, and K. M. Lau,"Reduction of Current Collapse in an un-passivated AlGaN-GaN Double-Channel HEMT,"*2004 Electronic Material Conference (EMC2004)*, Notre Dame, Indiana, USA, June 23-25, 2004. - D. Wang, S.
Jia,
**K. J. Chen**, K. M. Lau, Y. Dikme, P. van Gemmern, Y. C. Lin, and M. Heuken "Quantitative Stress Characterization in GaN Films grown on patterned Si(111) by Micro-Raman Spectroscopy,"*2004 Electronic Material Conference (EMC2004)*, Notre Dame, Indiana, USA, June 23-25, 2004. - W. C. Hon, J.
-W. Zhang, L. L. W. Leung, and
**K. J. Chen**, "High-Q CMOS-Compatible Micromachined Edge-suspended Inductors,"*2004 IEEE Radio Frequency Integrated Circuits Symposium (RFIC2004)*, Fort Worth, TX, USA, June 6-8, 2004. - L. L. W. Leung and
**K. J. Chen**, "Microwave Characterization of High Aspect Ratio Through-Wafer Interconnect Vias in Silicon substrates,"*2004 IEEE International Microwave Symposium (IMS2004)*, Fort Worth, Texas, USA, June 6-11, 2004. - D. Wang, Y.
Dikme, S. Jia, P. van Gemmern, Y. C. Lin,
**K. J. Chen**, K. M. Lau, and M. Heuken "Characterization of GaN grown on patterned Si(111) substrate,"*12th Int. Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XII)*, Maui, Hawaii, USA, May 30-June 4, 2004.

**2003:**

- T. Suligoj, H. Liu, J. K. O. Sin, K. Tsui,
**K. J. Chen**, P. Biljanovic, and K. L. Wang,"A Low-Cost Horizontal Current Bipolar Transistor (HCBT) Technology for the BiCMOS Integration with FinFETs,"*IEEE Int. Semiconductor Device Research Symposium,*Washington D. C., Dec. 10-12, 2003. - L. L. W. Leung,
W. C. Hon, and
**K. J. Chen**,"Low-loss CPW Interconnects on Low-resistivity Silicon Substrate,"*Proceeding of 2003 Asia-Pacific Microwave Conference (APMC2003)*, pp. 1875-1878, Seoul, Korea, Nov. 4-7, 2003. - L. L. W. Leung, T. W. Chen, S. W. Wong, M.
H. Chan, and
**K. J. Chen**,"A 2 GHz Single-chip Lumped-element Impedance Matching Network for RF Power Amplifiers on Standard Silicon Substrate,"*Proceeding of 2003 Asia-Pacific Microwave Conference (APMC2003)*, pp. 1836-1839, Seoul, Korea, Nov. 4-7, 2003. - B. P. Yan, E. S. Yang, Y. F. Yang, X. Q.
Wang, K. K. P. Tsui, and
**K. J. Chen**,"RF Large Signal Characterization of InGaP/GaAs Power Heterostructure-emitter Bipolar Transistors,"*Proceeding of 2003 Asia-Pacific Microwave Conference (APMC2003)*, pp. 209-212, Seoul, Korea, Nov. 4-7, 2003. - X. Huo, G. W. Xiao,
**K. J. Chen**, and P.C. H. Chan,"System-on-Organic Integration of a 2.4 GHz VCO Using High Q Copper Inductors and Solder-bumped Flip Chip Technology,"*Proceeding of 2003 IEEE Custom Integrated Circuits Conference (CICC2003)*, San Jose, California, USA, Sep. 21-24, 2003, pp. 537-540. - Y.G. Zhou, R. M. Chu,
**K. J. Chen**, and K. M. Lau,"AlGaN/GaN/Graded-AlGaN double heterostructure HEMT,"*2003 Int. Conf. Solid-State Devices and Materials (SSDM2003)*, Tokyo, Japan, Sep. 16-18, 2003, pp. 918-919. - R. M. Chu, Y. G. Zhou,
**K. J. Chen**, and K. M. Lau,"Trap States Induced Frequency Dispersion of AlGaN/GaN Heterostructure Field-Effect Transistors,"*2003 Electronic Material Conference (EMC2003)*, Salt Lake City, Utah, USA, June, 25-27, 2003, p.85. - R. M. Chu, Y. G. Zhou,
**K. J. Chen**, and K. M. Lau,"Admittance Characterization and Analysis of Trap States in AlGaN/GaN Heterostructures,"*5th Int. Conf. on Nitride Semiconductors*, Nara, Japan, May 25-30, 2003, p. 275. - X.P. Liao, K. Tsui, H. Liu,
**K. J. Chen**, and J. K. O. Sin,"A Step-Gate-Oxide SOI MOSFET for RF Power Amplifiers in Short- and Medium-range Wireless Applications,"*2003 IEEE MTT-S Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF2003)*, Grainau, Germany, pp. 33-36, April 9-11, 2003.

**2002:**

- K. Tsui,
**K. J. Chen**, S. Lam, and M. Chan, "RF Power Characteristics of Thin Film Silicon-on-Sapphire MOSFET,"*2002 Int. Conf. Solid State Devices and Materials (SSDM'2002)*, Nagoya, Japan, Sep. 17-20, 2002, pp. 594-595. - Lydia L. W. Leung,
**K. J. Chen**, X. Huo, and P.C.H. Chan, "On-Chip Microwave Filters on Standard Silicon Substrates Incorporating a low-k BCB Dielectric Layer,"*2002 European Microwave Conference*, Sep. 23-27, Milan, Italy. **K. J. Chen**, X. Huo, L. L. W. Leung, and P.C.H. Chan, "High-performance microwave passive components on silicon substrate,"*3rd International Conference on Microwave and Millimeter Wave Technology (ICMMT2002)*, Aug. 17-19, Beijing, 2002, pp. 263-266.- X. Huo,
**K. J. Chen**, and P.C.H. Chan, "High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer," Proceeding of*2002 IEEE RFIC Symposium*, pp. 403-406, June 2-4, Seattle, USA.