In the press:
Li Yuan's work on normally-off AlGaN/GaN metal-2DEG tunnel junction FETs will be published in IEEE Electron Device Letters, March 2011. This work has also been featured in Compoundsemiconductor and Semiconductor Today
Xiaosen Liu's work on GaN single polarity power supply comparator has been published in IEEE Electron Device letters, January 2011.
Chenyue Ma presented the paper "Reliability of Enhancement-mode AlGaN/GaN HEMT under ON-state Gate Overdrive" in 2010 IEDM, Dec. 4-7. 2010, San Francisco, USA. This work is also featured in Semiconductor Today.
Xiaosen Liu gave an oral presentation on at the 32nd IEEE Compound Semiconductor IC Symposium (CSICS), Oct. 3-6, 2010, Monterey, California, USA.
Junxue Fu presented her paper "Microsphere manipulation and sensing system by AlGaN/GaN 2DEG," in the 2010 International Workshop on Nitride Semiconductors, Sep. 19-24, 2010, Tampa, USA.
Sen Huang presented his paper "Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of AlGaN/GaN heterostructures," in the 2010 International Workshop on Nitride Semiconductors, Sep. 19-24, 2010, Tampa, USA.
King Yuen Wong and Maojun Wang both had their papers published in IEEE Trans. Electron Devices, 2010.
Former postdoc, Dr. Wanjun Chen has been promoted to associate professor at University of Electronic Science and Technology China.
Chunhua's paper on "Self-Protected GaN Power Devices with Reverse Drain Blocking and Froward Current Limiting Capabilities," won the Charitat Award at The 22nd International Symposium on Power Semiconductor Devices and ICs (ISPSD'09), June 6-10, 2010, Hiroshima, Japan
Chunhua Zhou's paper on dual-channel lateral field-effect rectifier has been published in IEEE Electron Device Letters, Jan. 2010.
Wanjun Chen has returned to University of Electronic Science and Technology China as an assistant professor.
King Yuen's paper on zero-bias microwave mixer has been published in IEEE Trans. Electron Devices, Dec. 2009
In collaboration with Prof. Jiannong Wang's group, the work on Fermi-level's depinning at Ni/AlGaN has been published in Applied Physics Letters.
King Yuen successfully defended his Ph.D thesis and will join TSMC to work on 22nm CMOS technology, July 2009.
King Yuen's presentation on GaN smart power technology in ISPSD'09 (Barcelona, Spain) won the Charitat Award (for best student paper), June 2009.
Wanjun Chen's paper on single-chip boost converter has been published in IEEE EDL, May 2009
Maojun Wang's paper on fluorine incorporation in GaN has been published in Applied Physics Letters. April 2009
Dec. 15-17, 2008: three papers are presented in 2008 International Electron Device Meeting (IEDM'08), San Francisco. Two of the papers are highlighted in Semiconductor Today.
Wanjun's work on AlGaN/GaN HEMT-compatible lateral field-effect rectifier was reported on compound semiconductor net.